Description
Cree’s CMPA2560025F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit
(MMIC). GaN has superior properties compared to silicon or gallium
arsenide, including higher breakdown voltage, higher saturated
electron drift velocity and higher thermal conductivity. GaN HEMTs also
offer greater power density and wider bandwidths compared to Si and
GaAs transistors. This MMIC contains a two-stage reactively matched
amplifier enabling very wide bandwidths to be achieved in a small
footprint screw-down package featuring a Copper-Tungsten heat-sink.
Features
• 24 dB Small Signal Gain
• 25 W Typical PSAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
Applications
• Ultra Broadband Amplifiers
• Fiber Drivers
• Test Instrumentation
• EMC Amplifier Drivers