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S70GL256M00FAIIRA0 Datasheet (PDF) - SPANSION

S70GL256M00FAIIRA0 Datasheet PDF - SPANSION
Part # S70GL256M00FAIIRA0
Download  S70GL256M00FAIIRA0 Download

File Size   1159.2 Kbytes
Page   60 Pages
Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
Logo SPANSION - SPANSION
Description 256 Megabit (8 M x 32-Bit/16 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with Versatile I/O Control

S70GL256M00FAIIRA0 Datasheet (PDF)

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S70GL256M00FAIIRA0 Datasheet PDF - SPANSION

Part # S70GL256M00FAIIRA0
Download  S70GL256M00FAIIRA0 Click to download

File Size   1159.2 Kbytes
Page   60 Pages
Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
Logo SPANSION - SPANSION
Description 256 Megabit (8 M x 32-Bit/16 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with Versatile I/O Control

S70GL256M00FAIIRA0 Datasheet (HTML) - SPANSION

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S70GL256M00FAIIRA0 Product details

GENERAL DESCRIPTION
The S70GL256M00 consists of two 128 Mbit, 3.0 volt single power supply flash memory devices and is organized as 8,388,608 doublewords or 16,777,216 words. The device has a 32-bit wide data bus that can also function as an 16-bit wide data bus by using the WORD# input. The device can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics
ARCHITECTURAL ADVANTAGES
■ Single power supply operation
   — 3 volt read, erase, and program operations
■ VersatileI/OTM control
   — Device generates data output voltages and tolerates
      data input voltages on the CE# and DQ inputs/outputs
      as determined by the voltage on the VIO pin; operates
      from 1.65 to 3.6 V
■ Manufactured on 0.23 µm MirrorBitTM process technology
■ SecSi™ (Secured Silicon) Sector region
   — 128-doubleword/256-word sector for permanent,
      secure identification through an
      8-doubleword/16-word random Electronic Serial
      Number, accessible through a command sequence
   — May be programmed and locked at the factory or by
      the customer
■ Flexible sector architecture
   — Two hundred fifty-six 32 Kdoubleword (64 Kword) sectors
■ Compatibility with JEDEC standards
   — Provides pinout and software compatibility for
      single-power supply flash, and superior inadvertent
      write protection
■ 100,000 erase cycles typical per sector
■ 20-year data retention typical

PERFORMANCE CHARACTERISTICS
■ High performance
   — 110 ns access time
   — 30 ns page read times
   — 0.5 s typical sector erase time
   — 15 µs typical write buffer doubleword programming
      time: 16-doubleword/32-word write buffer reduces
      overall programming time for multiple-word updates
   — 4-doubleword/8-word page read buffer
   — 16-doubleword/32-word write buffer
■ Low power consumption (typical values at 3.0 V, 5 MHz)
   — 26 mA typical active read current
   — 100 mA typical erase/program current
   — 2 µA typical standby mode current
■ Package options
   — 80-ball Fortified BGA

SOFTWARE & HARDWARE FEATURES
■ Software features
   — Program Suspend & Resume: read other sectors
      before programming operation is completed
   — Erase Suspend & Resume: read/program other
      sectors before an erase operation is completed
   — Data# polling & toggle bits provide status
   — Unlock Bypass Program command reduces overall
      programming time
   — CFI (Common Flash Interface) compliant: allows host
      system to identify and accommodate multiple flash
      devices
■ Hardware features
   — Sector Group Protection: hardware-level method of
      preventing write operations within a sector group
   — Temporary Sector Group Unprotect: VID-level method
      of changing code in locked sector groups
   — WP#/ACC input accelerates programming time
      (when high voltage is applied) for greater throughput
      during system production. Protects first or last sector
      group regardless of sector group protection settings
   — Hardware reset input (RESET#) resets device
   — Ready/Busy# output (RY/BY#) detects program or
      erase cycle completion




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