3.2 V OPERATION SILICON RF POWER LDMOS FET
FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS

DESCRIPTION
The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology and housed in a surface mount
package. This device can deliver 34.6 dBm output power with 68% power efficiency at 915 MHz under the 2.8 V
supply voltage.
FEATURES
• High output power : Pout = 35.5 dBm TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 915 MHz, Pin = 25 dBm)
: Pout = 33.0 dBm TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 1 785 MHz, Pin = 25 dBm)
• High power added efficiency : ηadd = 65% TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 915 MHz, Pin = 25 dBm)
: ηadd = 35% TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 1 785 MHz, Pin = 25 dBm)
• High linear gain : GL = 16.0 dB TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 915 MHz, Pin = 10 dBm)
: GL = 8.5 dB TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 1 785 MHz, Pin = 10 dBm)
• Surface mount package : 5.7 × 5.7 × 1.1 mm MAX.
• Single supply : VDS = 2.8 to 6.0 V