3.2 V OPERATION SILICON RF POWER LDMOS FET
FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS

DESCRIPTION
The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the
transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology
(our WSi gate laterally diffused MOS FET) and housed in a surface mount package. This device can deliver 32.0
dBm output power with 45% power added efficiency at 1.8 GHz under the 3.2 V supply voltage.
FEATURES
• High output power : Pout = 32.0 dBm TYP. (VDS = 3.2 V, IDset = 700 mA, f = 1.8 GHz, Pin = 25 dBm)
• High power added efficiency : ηadd = 45% TYP. (VDS = 3.2 V, IDset = 700 mA, f = 1.8 GHz, Pin = 25 dBm)
• High linear gain : GL = 10 dB TYP. (VDS = 3.2 V, IDset = 700 mA, f = 1.8 GHz, Pin = 5 dBm)
• Surface mount package : 5.7 × 5.7 × 1.1 mm MAX.
• Single supply : VDS = 2.8 to 6.0 V