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NE4210S01-T1B Datasheet (PDF) - Renesas Technology Corp

NE4210S01-T1B Datasheet PDF - Renesas Technology Corp
Part # NE4210S01-T1B
Download  NE4210S01-T1B Download

File Size   199.83 Kbytes
Page   18 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE4210S01-T1B Datasheet (PDF)

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NE4210S01-T1B Datasheet PDF - Renesas Technology Corp

Part # NE4210S01-T1B
Download  NE4210S01-T1B Click to download

File Size   199.83 Kbytes
Page   18 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE4210S01-T1B Datasheet (HTML) - Renesas Technology Corp

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NE4210S01-T1B Product details

DESCRIPTION
The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.5 dB TYP. Ga = 13.0 dB TYP. @f = 12 GHz
• Gate Length: Lg £ 0.20 mm
• Gate Width : Wg = 160 mm




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About Renesas Technology Corp


Renesas Technology Corp is a Japanese semiconductor company that provides a wide range of microcontrollers, system-on-chips, and analog and power devices for various applications in the automotive, industrial, and consumer markets.
The company was formed in 2010 through the merger of NEC Electronics Corporation and Renesas Technology Corporation.
Renesas is one of the largest microcontroller suppliers in the world and is known for its expertise in the development of advanced technologies in areas such as the Internet of Things (IoT), artificial intelligence (AI), and automotive electronics.
The company has operations in over 20 countries and its products are used in a wide range of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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