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M5M44800CJ Datasheet (PDF) - Mitsubishi Electric Semiconductor

M5M44800CJ Datasheet PDF - Mitsubishi Electric Semiconductor
Part No. M5M44800CJ
Download  M5M44800CJ Click to view

File Size   209.0 Kbytes
Page   21 Pages
Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor
Description FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM

M5M44800CJ Datasheet (PDF)

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M5M44800CJ Datasheet PDF - Mitsubishi Electric Semiconductor

Part No. M5M44800CJ
Download  M5M44800CJ Click to view

File Size   209.0 Kbytes
Page   21 Pages
Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor
Description FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM

M5M44800CJ Datasheet (HTML) - Mitsubishi Electric Semiconductor

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M5M44800CJ Product details

DESCRIPTION
This is a family of 524288-word by 8-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for largecapacity memory systems where high speed, low power dissipation, and low costs are essential.
The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is low enough for battery back-up application.

FEATURES
● Standard 28pin SOJ, 28pin TSOP (II)
● Single 5V±10% supply
● Low stand-by power dissipation
   CMOS lnput level 5.5mW (Max)
   CMOS Input level 550µW (Max) *
● Operating power dissipation
   M5M44800Cxx-5,-5S 495mW (Max)
   M5M44800Cxx-6,-6S 413mW (Max)
   M5M44800Cxx-7,-7S 358mW (Max)
● Self refresh capability *
   Self refresh current 150µA(Max)
● Extended refresh capability
   Extended refresh current 150µA(Max)
● Fast page mode(1024-column random access),Read-modify-write,
   RAS-only refresh, CAS before RAS refresh, Hidden refresh
   capabilities.
● Early-write mode, CAS and OE to control output buffer impedance
● 1024 refresh cycles every 16.4ms (A0 ~A9)
● 1024 refresh cycles every 128ms (A0 ~A9) *
* :Applicable to self refresh version (M5M44800CJ,TP-5S,-6S,-7S :option) only



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