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IS61LF12832A Datasheet (PDF) - Integrated Silicon Solution, Inc

IS61LF12832A Datasheet PDF - Integrated Silicon Solution, Inc
Part # IS61LF12832A
Download  IS61LF12832A Download

File Size   166.7 Kbytes
Page   25 Pages
Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Description 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

IS61LF12832A Datasheet (PDF)

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IS61LF12832A Datasheet PDF - Integrated Silicon Solution, Inc

Part # IS61LF12832A
Download  IS61LF12832A Click to download

File Size   166.7 Kbytes
Page   25 Pages
Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Description 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

IS61LF12832A Datasheet (HTML) - Integrated Silicon Solution, Inc

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IS61LF12832A Product details

DESCRIPTION
The ISSI IS61(64)LF12832A, IS64VF12832A, IS61(64)LF/VF12836A and IS61(64)LF/VF25618A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61(64)LF12832A is organized as 131,072 words by 32 bits. The IS61(64)LF/VF12836A is organized as 131,072 words by 36 bits. The IS61(64)LF/VF25618A is organized as 262,144 words by 18 bits. Fabricated with ISSIs advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.

FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and control
• Burst sequence control using MODE input
• Three chip enable option for simple depth expansion and address pipelining
• Common data inputs and data outputs
• Auto Power-down during deselect
• Single cycle deselect
• Snooze MODE for reduced-power standby
• Power Supply
    LF: VDD 3.3V + 5%, VDDQ 3.3V/2.5V + 5%
    VF: VDD 2.5V -5% +10%, VDDQ 2.5V -5% +10%
• JEDEC 100-Pin TQFP, 119-pin PBGA, and 165-pin PBGA packages
• Automotive temperature available
• Lead-free available




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About Integrated Silicon Solution, Inc


Integrated Silicon Solution, Inc. (ISSI) is a fabless semiconductor company that designs and markets high-performance integrated circuits (ICs) for the automotive, industrial, medical, and communications markets. The company was founded in 1988 and is headquartered in Milpitas, California, USA.

ISSI's product portfolio includes static random access memory (SRAM), dynamic random access memory (DRAM), and analog and mixed-signal ICs. The company specializes in low-power, high-speed SRAMs, and is a leading supplier of DRAMs to the automotive market.

In 2015, ISSI was acquired by China's Uphill Investment Co., Ltd. and became a wholly-owned subsidiary of Uphill Investment.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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