Features
• Low voltage operation SRAM
    Operating Supply Voltage: 2.7 V to 3.6 V
• 0.8 µm Hi-CMOS process
• High speed
    Access time: 70/85/100 ns (max)
• Low power
    Standby: 0.15 µW (typ)
• Completely static memory
    No clock or timing strobe required
• Directly LVTTL compatible: All inputs and outputs