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TLP350 Datasheet (PDF) - Toshiba Semiconductor

TLP350 Datasheet PDF - Toshiba Semiconductor
Part # TLP350
Download  TLP350 Download

File Size   141.69 Kbytes
Page   6 Pages
Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Description Inverter for Air Conditioner, IGBT/Power MOS FET Gate Drive, Industrial Inverter

TLP350 Datasheet (PDF)

Go To PDF Page Download Datasheet
TLP350 Datasheet PDF - Toshiba Semiconductor

Part # TLP350
Download  TLP350 Click to download

File Size   141.69 Kbytes
Page   6 Pages
Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Description Inverter for Air Conditioner, IGBT/Power MOS FET Gate Drive, Industrial Inverter

TLP350 Datasheet (HTML) - Toshiba Semiconductor

TLP350 Datasheet HTML 1Page - Toshiba Semiconductor TLP350 Datasheet HTML 2Page - Toshiba Semiconductor TLP350 Datasheet HTML 3Page - Toshiba Semiconductor TLP350 Datasheet HTML 4Page - Toshiba Semiconductor TLP350 Datasheet HTML 5Page - Toshiba Semiconductor TLP350 Datasheet HTML 6Page - Toshiba Semiconductor

TLP350 Product details

Inverter for Air Conditioner IGBT/Power MOS FET Gate Drive Industrial Inverter



The TOSHIBA TLP350 consists of a GaAℓAs light emitting diode and a integrated photodetector.

This unit is 8-lead DIP package.

TLP350 is suitable for gate driving circuit of IGBT or power MOS FET..



•  Peak output current: IO = ±2.0 A (max)

•  Guaranteed performance over temperature: −40 to 100°C

•  Supply current:ICC= 2 mA (max)

•  Power supply voltage: VCC= 15 to 30 V

•  Threshold input current : IFLH= 5 mA (max)

•  Switching time (tpLH/tpHL) : 500 ns (max)

•  Common mode transient immunity: 15 kV/µs

•  Isolation voltage: 3750 Vrms




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