Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

K4S641632H Datasheet (PDF) - Samsung semiconductor

K4S641632H Datasheet PDF - Samsung semiconductor
Part # K4S641632H
Download  K4S641632H Download

File Size   144.64 Kbytes
Page   14 Pages
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Description 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

K4S641632H Datasheet (PDF)

Go To PDF Page Download Datasheet
K4S641632H Datasheet PDF - Samsung semiconductor

Part # K4S641632H
Download  K4S641632H Click to download

File Size   144.64 Kbytes
Page   14 Pages
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Description 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

K4S641632H Datasheet (HTML) - Samsung semiconductor

Back Button K4S641632H Datasheet HTML 1Page - Samsung semiconductor K4S641632H Datasheet HTML 2Page - Samsung semiconductor K4S641632H Datasheet HTML 3Page - Samsung semiconductor K4S641632H Datasheet HTML 4Page - Samsung semiconductor K4S641632H Datasheet HTML 5Page - Samsung semiconductor K4S641632H Datasheet HTML 6Page - Samsung semiconductor K4S641632H Datasheet HTML 7Page - Samsung semiconductor K4S641632H Datasheet HTML 8Page - Samsung semiconductor K4S641632H Datasheet HTML 9Page - Samsung semiconductor K4S641632H Datasheet HTML 10Page - Samsung semiconductor Next Button 

K4S641632H Product details

GENERAL DESCRIPTION
The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

FEATURES
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
    -. CAS latency (2 & 3)
    -. Burst length (1, 2, 4, 8 & Full page)
    -. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Burst read single-bit write operation
• DQM (x4,x8) & L(U)DQM (x16) for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)
• Pb-free Package
• RoHS compliant




Similar Part No. - K4S641632H

ManufacturerPart #DatasheetDescription
logo
Samsung semiconductor
K4S641632H-TC60 SAMSUNG-K4S641632H-TC60 Datasheet
144Kb / 14P
   64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
K4S641632H-TC70 SAMSUNG-K4S641632H-TC70 Datasheet
144Kb / 14P
   64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
K4S641632H-TC75 SAMSUNG-K4S641632H-TC75 Datasheet
144Kb / 14P
   64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
K4S641632H-TL60 SAMSUNG-K4S641632H-TL60 Datasheet
144Kb / 14P
   64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
K4S641632H-TL70 SAMSUNG-K4S641632H-TL70 Datasheet
144Kb / 14P
   64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
More results


Similar Description - K4S641632H

ManufacturerPart #DatasheetDescription
logo
Samsung semiconductor
K4S640432H-TC SAMSUNG-K4S640432H-TC Datasheet
144Kb / 14P
   64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
K4S560432E-UC SAMSUNG-K4S560432E-UC Datasheet
198Kb / 14P
   256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
K4S280432F-UC SAMSUNG-K4S280432F-UC Datasheet
145Kb / 14P
   128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
K4H511638D SAMSUNG-K4H511638D Datasheet
366Kb / 24P
   512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H1G0438M-UC SAMSUNG-K4H1G0438M-UC Datasheet
206Kb / 23P
   1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H280438F-UC SAMSUNG-K4H280438F-UC Datasheet
298Kb / 23P
   128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H560438E-UC SAMSUNG-K4H560438E-UC Datasheet
297Kb / 23P
   256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H560438E-VC SAMSUNG-K4H560438E-VC Datasheet
297Kb / 23P
   256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
M470L3324DU0 SAMSUNG-M470L3324DU0 Datasheet
284Kb / 20P
   DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)
K4S643232H SAMSUNG-K4S643232H Datasheet
118Kb / 12P
   64Mb H-die (x32) SDRAM Specification
More results



Link URL



Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com