Plastic Medium−Power

Complementary Silicon

Transistors

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLTS, 65 WATTS

These devices are designed for general−purpose amplifier and low−speed switching applications.

Features

• High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc

• Collector Emitter Sustaining Voltage − @ 100 mAdc

VCEO(sus) = 80 Vdc (Min) − BDX53B, 54B

VCEO(sus) = 100 Vdc (Min) − BDX53C, 54C

• Low Collector−Emitter Saturation Voltage −

VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc

VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc

• Monolithic Construction with Built−In Base−Emitter Shunt Resistors

• Pb−Free Packages are Available*