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M5M4V64S30ATP-8A Datasheet (PDF) - Mitsubishi Electric Semiconductor

M5M4V64S30ATP-8A Datasheet PDF - Mitsubishi Electric Semiconductor
Part No. M5M4V64S30ATP-8A
Download  M5M4V64S30ATP-8A Click to view

File Size   1082.33 Kbytes
Page   51 Pages
Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor
Description 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM

M5M4V64S30ATP-8A Datasheet (PDF)

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M5M4V64S30ATP-8A Datasheet PDF - Mitsubishi Electric Semiconductor

Part No. M5M4V64S30ATP-8A
Download  M5M4V64S30ATP-8A Click to view

File Size   1082.33 Kbytes
Page   51 Pages
Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor
Description 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM

M5M4V64S30ATP-8A Datasheet (HTML) - Mitsubishi Electric Semiconductor

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M5M4V64S30ATP-8A Product details

DESCRIPTION
The M5M4V64S30ATP is a 4-bank x 2097152-word x 8-bit Synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M5M4V64S30ATP achieves very high speed data rate up to 125MHz, and is suitable for main memory or graphic memory in computer systems.

FEATURES
- Single 3.3v±0.3v power supply
- Clock frequency 125MHz /100MHz
- Fully synchronous operation referenced to clock rising edge
- 4 bank operation controlled by BA0, BA1 (Bank Address)
- /CAS latency- 2/3 (programmable)
- Burst length- 1/2/4/8/Full Page (programmable)
- Burst type- sequential / interleave (programmable)
- Column access - random
- Burst Write / Single Write (programmable)
- Auto precharge / All bank precharge controlled by A10
- Auto refresh and Self refresh
- 4096 refresh cycles /64ms
- Column address A0-A8
- LVTTL Interface
- 400-mil, 54-pin Thin Small Outline Package (TSOP II) with 0.8mm lead pitch



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