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GM72V66841ET Datasheet (PDF) - Hynix Semiconductor

GM72V66841ET Datasheet PDF - Hynix Semiconductor
Part No. GM72V66841ET
Download  GM72V66841ET Click to view

File Size   90.16 Kbytes
Page   10 Pages
Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor
Description 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM

GM72V66841ET Datasheet (PDF)

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GM72V66841ET Datasheet PDF - Hynix Semiconductor

Part No. GM72V66841ET
Download  GM72V66841ET Click to view

File Size   90.16 Kbytes
Page   10 Pages
Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor
Description 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM

GM72V66841ET Datasheet (HTML) - Hynix Semiconductor

GM72V66841ET Datasheet HTML 1Page - Hynix Semiconductor GM72V66841ET Datasheet HTML 2Page - Hynix Semiconductor GM72V66841ET Datasheet HTML 3Page - Hynix Semiconductor GM72V66841ET Datasheet HTML 4Page - Hynix Semiconductor GM72V66841ET Datasheet HTML 5Page - Hynix Semiconductor GM72V66841ET Datasheet HTML 6Page - Hynix Semiconductor GM72V66841ET Datasheet HTML 7Page - Hynix Semiconductor GM72V66841ET Datasheet HTML 8Page - Hynix Semiconductor GM72V66841ET Datasheet HTML 9Page - Hynix Semiconductor GM72V66841ET Datasheet HTML 10Page - Hynix Semiconductor

GM72V66841ET Product details

Description
The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positive edge of the externally provided Clock.
The GM72V66841ET/ELT provides four banks of 2,097,152 word by 8 bit to realize high bandwidth with the Clock frequency up to 143 Mhz.

Features
* PC133/PC100/PC66 Compatible
    -7(143MHz)/-75(133MHz)/-8(125MHz)
    -7K(PC100,2-2-2)/-7J(PC100,3-2-2)
* 3.3V single Power supply
* LVTTL interface
* Max Clock frequency 143/133/125/100MHz
* 4,096 refresh cycle per 64 ms
* Two kinds of refresh operation Auto refresh / Self refresh
* Programmable burst access capability ;
    - Sequence:Sequential / Interleave
    - Length :1/2/4/8/FP
* Programmable CAS latency : 2/3
* 4 Banks can operate independently or simultaneously
* Burst read/burst write or burst read/single write operation capability
* Input and output masking by DQM input
* One Clock of back to back read or write command interval
* Synchronous Power down and Clock suspend capability with one Clock latency for both entry and exit
* JEDEC Standard 54Pin 400mil TSOP II Package



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About Hynix Semiconductor


Hynix Semiconductor is a South Korean company that specializes in the design and manufacture of memory semiconductors.
The company was founded in 1983 and is headquartered in Icheon, South Korea.
Hynix is one of the world's leading producers of DRAM (dynamic random access memory) and NAND flash memory, which are used in various applications such as computer systems, mobile devices, and solid-state drives.
Hynix is known for its expertise in memory semiconductor technology and its ability to deliver high-quality and high-performance memory products to its customers.
The company has operations and facilities in various countries across the world and works closely with its customers to provide customized memory solutions that meet their specific requirements and needs.
In addition to its memory products, Hynix also provides a range of products and solutions for the automotive and data center markets, such as system-on-a-chip (SoC) products and high-bandwidth memory (HBM) products.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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