Manufacturer | Part # | Datasheet | Description |
Micron Technology |
MT49H8M32
|
652Kb / 43P |
REDUCED LATENCY DRAM RLDRAM
|
MT49H8M36
|
1Mb / 49P |
288Mb CIO Reduced Latency
|
MT49H32M9
|
2Mb / 76P |
288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II
|
GSI Technology |
GS82582D38GE-400
|
453Kb / 27P |
288Mb SigmaQuad-II 288Mb SigmaQuad-II
|
Integrated Silicon Solu... |
IS49NLS93200
|
596Kb / 34P |
288Mb (x9, x18) Separate I/O RLDRAM 2 Memory
|
IS49NLC93200
|
622Kb / 34P |
288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
|
Infineon Technologies A... |
HYB18RL25632AC
|
941Kb / 37P |
256 Mbit DDR Reduced Latency DRAM
V1.60 July 2003 |
GSI Technology |
GS4288C09
|
2Mb / 62P |
32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM (LLDRAM) II
|
Samsung semiconductor |
K7J643682M
|
434Kb / 18P |
2Mx36 & 4Mx18 DDR II SIO b2 SRAM
|
K7J323682C
|
415Kb / 18P |
1Mx36 & 2Mx18 DDR II SIO b2 SRAM
|