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K9F1208D0A-P Datasheet (PDF) - Samsung semiconductor

K9F1208D0A-P Datasheet PDF - Samsung semiconductor
Part # K9F1208D0A-P
Download  K9F1208D0A-P Download

File Size   748.18 Kbytes
Page   46 Pages
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Description 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

K9F1208D0A-P Datasheet (PDF)

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K9F1208D0A-P Datasheet PDF - Samsung semiconductor

Part # K9F1208D0A-P
Download  K9F1208D0A-P Click to download

File Size   748.18 Kbytes
Page   46 Pages
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Description 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

K9F1208D0A-P Datasheet (HTML) - Samsung semiconductor

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K9F1208D0A-P Product details

GENERAL DESCRIPTION
Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per byte(X8 device) or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command input.

FEATURES
• Voltage Supply
    - 2.65V device(K9F12XXD0A) : 2.4~2.9V
    - 3.3V device(K9F12XXU0A) : 2.7 ~ 3.6 V
• Organization
    - Memory Cell Array
    - X8 device(K9F1208X0A) : (64M + 2048K)bit x 8 bit
    - X16 device(K9F1216X0A) : (32M + 1024K)bit x 16bit
    - Data Register
    - X8 device(K9F1208X0A) : (512 + 16)bit x 8bit
    - X16 device(K9F1216X0A) : (256 + 8)bit x16bit
• Automatic Program and Erase
    - Page Program
    - X8 device(K9F1208X0A) : (512 + 16)Byte
    - X16 device(K9F1216X0A) : (256 + 8)Word
    - Block Erase :
    - X8 device(K9F1208X0A) : (16K + 512)Byte
    - X16 device(K9F1216X0A) : ( 8K + 256)Word
• Page Read Operation
    - Page Size
    - X8 device(K9F1208X0A) : (512 + 16)Byte
    - X16 device(K9F1216X0A) : (256 + 8)Word
    - Random Access : 12ms(Max.)
    - Serial Page Access : 50ns(Min.)
• Fast Write Cycle Time
    - Program time : 200ms(Typ.)
    - Block Erase Time : 2ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
    - Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
    - Endurance : 100K Program/Erase Cycles
    - Data Retention : 10 Years
• Command Register Operation
• Intelligent Copy-Back
• Unique ID for Copyright Protection
• Package
    - K9F12XXX0A-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
    - K9F1208U0A-VCB0/VIB0 48 - Pin WSOP I (12X17X0.7mm)
    - K9F12XXX0A-PCB0/PIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
    - K9F1208U0A-FCB0/FIB0 48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F1208U0A-V,F(WSOPI ) is the same device as K9F1208U0A-Y,P(TSOP1) except package type.




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