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E28F800BV-B80 Datasheet (PDF) - Intel Corporation

E28F800BV-B80 Datasheet PDF - Intel Corporation
Part # E28F800BV-B80
Download  E28F800BV-B80 Download

File Size   638.12 Kbytes
Page   55 Pages
Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation
Description 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY

E28F800BV-B80 Datasheet (PDF)

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E28F800BV-B80 Datasheet PDF - Intel Corporation

Part # E28F800BV-B80
Download  E28F800BV-B80 Click to download

File Size   638.12 Kbytes
Page   55 Pages
Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation
Description 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY

E28F800BV-B80 Datasheet (HTML) - Intel Corporation

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E28F800BV-B80 Product details

PRODUCT FAMILY OVERVIEW
This datasheet contains the specifications for the two branches of products in the SmartVoltage 2-Mbit boot block flash memory family. These -BV/CV suffix products offer 3.0 V–3.6 V operation and also operate at 5 V for high-speed access times. Throughout this datasheet, the 28F200 refers to all x8/x16 2-Mbit products, while 28F002B refers to all x8 2-Mbit boot block products. Section 1.0 provides an overview of the flash memory family including applications, pinouts and pin descriptions. Sections 2.0 and 3.0 describe the memory organization and operation for these products. Section 4.0 contains the family’s operating specifications. Finally, Sections 5.0 and 6.0 provide ordering and document reference information.

■ Intel SmartVoltage Technology
    - 5 V or 12 V Program/Erase
    - 3.3 V or 5 V Read Operation
■ Very High-Performance Read
    - 5 V: 60 ns Access Time
    - 3 V: 110 ns Access Time
■ Low Power Consumption
    - Max 60 mA Read Current at 5 V
    - Max 30 mA Read Current at 3.3 V–3.6 V
■ x8/x16-Selectable Input/Output Bus
    - 28F200 for High Performance 16- or 32-bit CPUs
■ x8-Only Input/Output Architecture
    - 28F002B for Space-Constrained 8-bit Applications
■ Optimized Array Blocking Architecture
    - One 16-KB Protected Boot Block
    - Two 8-KB Parameter Blocks
    - 96-KB and 128-KB Main Blocks
    - Top or Bottom Boot Locations
■ Extended Temperature Operation
    - –40 °C to +85 °C
■ Extended Block Erase Cycling
    - 100,000 Cycles at Commercial Temp
    - 10,000 Cycles at Extended Temp
■ Automated Word/Byte Program and Block Erase
    - Command User Interface
    - Status Registers
    - Erase Suspend Capability
■ SRAM-Compatible Write Interface
■ Automatic Power Savings Feature
■ Reset/Deep Power-Down Input
    - 0.2 µA ICCTypical
    - Provides Reset for Boot Operations
■ Hardware Data Protection Feature
    - Absolute Hardware-Protection for Boot Block
    - Write Lockout during Power Transitions
■ Industry-Standard Surface Mount Packaging
    - 40-, 48-, 56-Lead TSOP
    - 44-Lead PSOP
■ Footprint Upgradeable to 4-Mbit and 8-Mbit Boot Block Flash Memories
■ ETOX™ IV Flash Technology




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About Intel Corporation


Intel Corporation is an American multinational corporation and technology company headquartered in Santa Clara, California.
It is one of the world's largest and highest valued semiconductor chip makers, based on revenue.
Intel is best known for its development of microprocessors, the central processing units (CPUs) of computers.
Founded in 1968, Intel has been a leader in the computer hardware industry for over five decades.
In addition to microprocessors, the company offers a wide range of products and technologies, including data center and network equipment, solid-state drives, internet of things (IoT) devices, and more.
Intel is also a leading player in the development of 5G networks and autonomous vehicles.
With a focus on innovation and technology leadership, Intel continues to play a significant role in shaping the future of computing and technology.
The company invests heavily in research and development and has been awarded over 17,000 patents for its innovations.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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