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S29WS256N0LBAW010 Datasheet (PDF) - SPANSION

S29WS256N0LBAW010 Datasheet PDF - SPANSION
Part # S29WS256N0LBAW010
Download  S29WS256N0LBAW010 Download

File Size   1091.58 Kbytes
Page   99 Pages
Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
Logo SPANSION - SPANSION
Description 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY

S29WS256N0LBAW010 Datasheet (PDF)

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S29WS256N0LBAW010 Datasheet PDF - SPANSION

Part # S29WS256N0LBAW010
Download  S29WS256N0LBAW010 Click to download

File Size   1091.58 Kbytes
Page   99 Pages
Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
Logo SPANSION - SPANSION
Description 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY

S29WS256N0LBAW010 Datasheet (HTML) - SPANSION

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S29WS256N0LBAW010 Product details

General Description
The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks using separate data and address pins. These products can operate up to 80 MHz and use a single VCC of 1.7 V to 1.95 V that makes them ideal for today’s demanding wireless applications requiring higher density, better performance and lowered power consumption.

Distinctive Characteristics
■ Single 1.8 V read/program/erase (1.70–1.95 V)
■ 110 nm MirrorBit™ Technology
■ Simultaneous Read/Write operation with zero
   latency
■ 32-word Write Buffer
■ Sixteen-bank architecture consisting of 16/8/4
   Mwords for WS256N/128N/064N, respectively
■ Four 16 Kword sectors at both top and bottom of
   memory array
■ 254/126/62 64 Kword sectors (WS256N/128N/
   064N)
■ Programmable burst read modes
   — Linear for 32, 16 or 8 words linear read with or
      without wrap-around
   — Continuous sequential read mode
■ SecSi™ (Secured Silicon) Sector region consisting
   of 128 words each for factory and customer
■ 20-year data retention (typical)
■ Cycling Endurance: 100,000 cycles per sector
   (typical)
■ RDY output indicates data available to system
■ Command set compatible with JEDEC (42.4)
   standard
■ Hardware (WP#) protection of top and bottom
   sectors
■ Dual boot sector configuration (top and bottom)
■ Offered Packages
   — WS064N: 80-ball FBGA (7 mm x 9 mm)
   — WS256N/128N: 84-ball FBGA (8 mm x 11.6 mm)
■ Low VCC write inhibit
■ Persistent and Password methods of Advanced
   Sector Protection
■ Write operation status bits indicate program and
   erase operation completion
■ Suspend and Resume commands for Program and
   Erase operations
■ Unlock Bypass program command to reduce
   programming time
■ Synchronous or Asynchronous program operation,
   independent of burst control register settings
■ ACC input pin to reduce factory programming time
■ Support for Common Flash Interface (CFI)
■ Industrial Temperature range (contact factory)




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