TRENCH Datasheet(PDF) - NX3020NAKS - NXP Semiconductors

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TRENCH Datasheet, PDF

Searched Keyword : 'TRENCH' - Total: 176 (9/9) Pages

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	NX3020NAKS	287Kb/15P	30 V, 180 mA dual N-channel Trench MOSFET 11 November 2013
	NX3008PBKS	905Kb/17P	30 V, 200 mA dual P-channel Trench MOSFET Rev. 1-1 August 2011
	2N7002BKS	384Kb/16P	60 V, 300 mA dual N-channel Trench MOSFET Rev. 2-23 September 2010
	BSS138BKS	888Kb/17P	60 V, 320 mA dual N-channel Trench MOSFET Rev. 1-12 August 2011
	BSS138PS	374Kb/16P	60 V, 320 mA dual N-channel Trench MOSFET Rev. 1-2 November 2010
	NX3020NAKV	223Kb/14P	30 V, 200 mA dual N-channel Trench MOSFET 29 October 2013
	BSS84AKV	876Kb/17P	50 V, 170 mA dual P-channel Trench MOSFET Rev. 1-19 May 2011
	NX3020NAKS	287Kb/15P	30 V, 180 mA dual N-channel Trench MOSFET 11 November 2013
	NX3008PBKV	877Kb/17P	30 V, 220 mA dual P-channel Trench MOSFET Rev. 1-29 July 2011
	2N7002BKV	379Kb/16P	60 V, 340 mA dual N-channel Trench MOSFET Rev. 2-22 September 2010
	PMDT290UNE	186Kb/16P	20 V, 800 mA dual N-channel Trench MOSFET Rev. 1-13 September 2011
	BSS84AKS	899Kb/17P	50 V, 160 mA dual P-channel Trench MOSFET Rev. 1-23 May 2011
	NX3008CBKS	1Mb/21P	30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET Rev. 1-29 July 2011
	PMGD290UCEA	365Kb/21P	20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 28 March 2014
	NX1029X	975Kb/20P	60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET Rev. 1-12 August 2011
	NX3008CBKV	1Mb/21P	30 / 30 V 400 / 220 mA N/P-channel Trench MOSFET Rev. 1-29 July 2011

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What is TRENCH

Trench is one of the electronic component manufacturing technologies, and is used in the process of making semiconductor devices.

Trench technology is a technology developed to improve the electrical performance of semiconductor devices.

Trench technology redesigns the structure of semiconductor devices to improve device heat generation and performance degradation.

With trench technology, a small pit (trench) can be dug inside a semiconductor device to increase the surface area of the device.

This improves electrical performance because the path through which the current flows is shorter.

Trench technology is primarily used in high-performance semiconductor devices such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors).

These semiconductor devices are used in high-speed electronic circuits, power conversion devices, and automotive control devices.

Trench technology plays a very important role in the modern electronic component industry as it improves device performance and efficiency.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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