TRENCH Datasheet(PDF) - BSS84AKT - NXP Semiconductors

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TRENCH Datasheet, PDF

Searched Keyword : 'TRENCH' - Total: 176 (8/9) Pages

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	BSS84AKT	870Kb/16P	50 V, 150 mA P-channel Trench MOSFET Rev. 1-23 May 2011
	BSS138BKW	864Kb/16P	60 V, 320 mA N-channel Trench MOSFET Rev. 1-12 August 2011
	PMT21EN	189Kb/15P	30 V, 7.4 A N-channel Trench MOSFET Rev. 1-30 August 2011
	BSS138BKW	864Kb/16P	60 V, 320 mA N-channel Trench MOSFET Rev. 1-12 August 2011
	BSS84AKM	859Kb/16P	50 V, 230 mA P-channel Trench MOSFET Rev. 1-23 May 2011
	PMF170XP	246Kb/15P	20 V, 1 A P-channel Trench MOSFET 29 October 2013
	2N7002BK	176Kb/16P	60 V, 350 mA N-channel Trench MOSFET Rev. 1-17 June 2010
	BSS138P	181Kb/16P	60 V, 360 mA N-channel Trench MOSFET Rev. 1-2 November 2010
	BSS138PW	358Kb/16P	60 V, 320 mA N-channel Trench MOSFET Rev. 1-2 November 2010
	BSS84AK	872Kb/16P	50 V, 180 mA P-channel Trench MOSFET Rev. 1-23 May 2011
	PMCXB900UE	320Kb/20P	20 V, complementary N/P-channel Trench MOSFET 30 June 2015
	NX3008PBKW	883Kb/16P	30 V, 200 mA P-channel Trench MOSFET Rev. 1-1 August 2011
	NX3008NBK	883Kb/16P	30 V, 400 mA N-channel Trench MOSFET Rev. 1-2 August 2011
	PMN48XP	528Kb/15P	20 V, 4.1 A P-channel Trench MOSFET Rev. 1-21 April 2011
	PMN27UP	828Kb/15P	20 V, 5.7 A P-channel Trench MOSFET Rev. 1-13 July 2011
	BSS84AKW	874Kb/16P	50 V, 150 mA P-channel Trench MOSFET Rev. 1-23 May 2011
	PMDT290UNE	186Kb/16P	20 V, 800 mA dual N-channel Trench MOSFET Rev. 1-13 September 2011
	BSS138BKS	861Kb/18P	60 V, 320 mA dual N-channel Trench MOSFET Rev. 1-12 August 2011
	NX3008NBKV	874Kb/17P	30 V, 400 mA dual N-channel Trench MOSFET Rev. 1-1 August 2011
	NX3008NBKS	902Kb/17P	30 V, 350 mA dual N-channel Trench MOSFET Rev. 1-1 August 2011

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What is TRENCH

Trench is one of the electronic component manufacturing technologies, and is used in the process of making semiconductor devices.

Trench technology is a technology developed to improve the electrical performance of semiconductor devices.

Trench technology redesigns the structure of semiconductor devices to improve device heat generation and performance degradation.

With trench technology, a small pit (trench) can be dug inside a semiconductor device to increase the surface area of the device.

This improves electrical performance because the path through which the current flows is shorter.

Trench technology is primarily used in high-performance semiconductor devices such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors).

These semiconductor devices are used in high-speed electronic circuits, power conversion devices, and automotive control devices.

Trench technology plays a very important role in the modern electronic component industry as it improves device performance and efficiency.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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