TRENCH Datasheet(PDF) - PMN27XPEA_15 - NXP Semiconductors

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TRENCH Datasheet, PDF

Searched Keyword : 'TRENCH' - Total: 176 (4/9) Pages

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	PMN27XPEA	283Kb/16P	20 V, single P-channel Trench MOSFET 19 June 2014
	PMDPB30XN	229Kb/13P	20 V, dual N-channel Trench MOSFET 6 July 2012
	PMN50UPE	232Kb/13P	20 V, single P-channel Trench MOSFET 20 July 2012
	PMV50UPE	231Kb/14P	20 V, single P-channel Trench MOSFET 20 July 2012
	PMV65XP	269Kb/14P	20 V, single P-channel Trench MOSFET 12 February 2013
	PMZB370UNE	974Kb/15P	30 V, single N-channel Trench MOSFET Rev. 1-8 May 2012
	BSS84AKMB	1Mb/15P	50 V, single P-channel Trench MOSFET Rev. 1-6 June 2012
	PMN40UPEA	282Kb/16P	20 V, single P-channel Trench MOSFET 19 June 2014
	PMDPB85UPE	879Kb/15P	20 V dual P-channel Trench MOSFET Rev. 1-20 June 2012
	2N7002BKMB	667Kb/15P	60 V, single N-channel Trench MOSFET Rev. 2-13 June 2012
	NX2020P1	273Kb/15P	30 V, single P-channel Trench MOSFET 22 January 2014
	NX7002BKW	271Kb/15P	60 V, single N-channel Trench MOSFET 20 March 2015
	PMV48XP	153Kb/15P	20 v, 3.5A P-channel Trench MOSFET Rev. 1-21 December 2010
	PMDPB80XP	899Kb/15P	20 V, dual P-channel Trench MOSFET Rev. 1-30 May 2012
	PMPB20XPE	258Kb/14P	20 V, single N-channel Trench MOSFET 30 November 2012
	PMPB47XP	245Kb/14P	30 V, single P-channel Trench MOSFET 5 December 2012
	PMZB290UN	838Kb/15P	20 V, single N-channel Trench MOSFET Rev. 1 ??11 May 2012
	NX3008NBKMB	1Mb/15P	30 V, single N-channel Trench MOSFET Rev. 1-11 May 2012
	NX3008PBKMB	1Mb/15P	30 V, single P-channel Trench MOSFET Rev. 1-11 May 2012
	PMPB95ENEA	241Kb/15P	80 V, single N-channel Trench MOSFET 17 December 2013

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What is TRENCH

Trench is one of the electronic component manufacturing technologies, and is used in the process of making semiconductor devices.

Trench technology is a technology developed to improve the electrical performance of semiconductor devices.

Trench technology redesigns the structure of semiconductor devices to improve device heat generation and performance degradation.

With trench technology, a small pit (trench) can be dug inside a semiconductor device to increase the surface area of the device.

This improves electrical performance because the path through which the current flows is shorter.

Trench technology is primarily used in high-performance semiconductor devices such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors).

These semiconductor devices are used in high-speed electronic circuits, power conversion devices, and automotive control devices.

Trench technology plays a very important role in the modern electronic component industry as it improves device performance and efficiency.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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