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TRENCH Datasheet, PDF

Searched Keyword : 'TRENCH' - Total: 46 (3/3) Pages
ManufacturerPart #DatasheetDescription
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Leshan Radio Company
S-LPB8619DT1AG Datasheet pdf image
981Kb/5P
P-Channel 60-V (D-S) MOSFET Low RDS(on) trench technology.
LNB8404DT0AG Datasheet pdf image
656Kb/5P
N-Channel 40-V (D-S) MOSFET Low RDS(on) trench technology.
LP7337DT1WG Datasheet pdf image
959Kb/7P
P-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
LPB8917DT0AG Datasheet pdf image
872Kb/6P
P-Channel 150-V (D-S) MOSFET Low RDS(on) trench technology
LN7342DT1WG Datasheet pdf image
604Kb/5P
N-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology
LN2605T1G Datasheet pdf image
590Kb/5P
N-Channel 60-V (D-S) MOSFET Low RDS(on) trench technology.

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What is TRENCH


Trench is one of the electronic component manufacturing technologies, and is used in the process of making semiconductor devices.

Trench technology is a technology developed to improve the electrical performance of semiconductor devices.

Trench technology redesigns the structure of semiconductor devices to improve device heat generation and performance degradation.

With trench technology, a small pit (trench) can be dug inside a semiconductor device to increase the surface area of the device.

This improves electrical performance because the path through which the current flows is shorter.

Trench technology is primarily used in high-performance semiconductor devices such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors).

These semiconductor devices are used in high-speed electronic circuits, power conversion devices, and automotive control devices.

Trench technology plays a very important role in the modern electronic component industry as it improves device performance and efficiency.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.


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