Manufacturer | Part # | Datasheet | Description |
Leshan Radio Company
|
S-LN7610DT1WG |
826Kb/6P |
N-Channel Power Trench MOSFET |
LN7610DT1WG |
822Kb/6P |
N-Channel Power Trench MOSFET |
LNB86085DT0AG |
395Kb/5P |
N-Channel Power Trench MOSFET |
LNB8616DT0AG |
426Kb/5P |
N-Channel Power Trench MOSFET |
LN76076HDT1WG |
1Mb/6P |
N-Channel Power Trench MOSFET |
LP4935T1G |
385Kb/5P |
P-Channel MOSFET Low RDS(on) trench technology. |
LNP3604T1G |
1Mb/4P |
30 V Complementary Trench MOSFET P-Channel:VDS = -30V |
LNP2601T1G |
713Kb/8P |
20 V Complementary Trench MOSFET N-Channel:VDS = 20V |
LNP3707T1G |
678Kb/4P |
30 V Complementary Trench MOSFET P-Channel:VDS = -30V |
LDP4098T1G |
335Kb/5P |
Dual P-Channel MOSFET Low RDS(on) trench technology. |
LDP4953T1G |
331Kb/5P |
Dual P-Channel MOSFET Low RDS(on) trench technology. |
S-LNB8266DT1AG |
658Kb/5P |
N-Channel 60-V Power MOSFET Low RDS(on) trench technology. |
S-LNP2601T1G |
2Mb/8P |
20 V Complementary Trench MOSFET; N-Channel:VDS = 20V; P-Channel:VDS = -20V; |
LP4433T1G |
567Kb/5P |
P-Channel 30-V (D-S) MOSFET Low rDS(on) trench technology |
LN7308DT1WG |
373Kb/3P |
N-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology. |
LNB8206DT0AG |
559Kb/5P |
N-Channel 20-V (D-S) MOSFET Low RDS(on) trench technology. |
LNB8408DT0AG |
553Kb/7P |
N-Channel 40-V (D-S) MOSFET Low RDS(on) trench technology. |
LP8233DT1AG |
701Kb/5P |
P-Channel 20-V (D-S) MOSFET Low RDS(on) trench technology |
S-LNB8260DT1AG |
434Kb/5P |
N-Channel 60-V (D-S) MOSFET Low RDS(on) trench technology. |
S-LPB8615DT0AG |
275Kb/5P |
P-Channel 60-V (D-S) MOSFET Low RDS(on) trench technology |