TRENCH Datasheet(PDF) - S-LN7610DT1WG - Leshan Radio Company

Electronic Components Datasheet Search

ALLDATASHEET.COM

X

TRENCH Datasheet, PDF

Searched Keyword : 'TRENCH' - Total: 46 (1/3) Pages

Manufacturer	Part #	Datasheet	Description
Leshan Radio Company	S-LN7610DT1WG	826Kb/6P	N-Channel Power Trench MOSFET
	LN7610DT1WG	822Kb/6P	N-Channel Power Trench MOSFET
	LNB86085DT0AG	395Kb/5P	N-Channel Power Trench MOSFET
	LNB8616DT0AG	426Kb/5P	N-Channel Power Trench MOSFET
	LN76076HDT1WG	1Mb/6P	N-Channel Power Trench MOSFET
	LP4935T1G	385Kb/5P	P-Channel MOSFET Low RDS(on) trench technology.
	LNP3604T1G	1Mb/4P	30 V Complementary Trench MOSFET P-Channel:VDS = -30V
	LNP2601T1G	713Kb/8P	20 V Complementary Trench MOSFET N-Channel:VDS = 20V
	LNP3707T1G	678Kb/4P	30 V Complementary Trench MOSFET P-Channel:VDS = -30V
	LDP4098T1G	335Kb/5P	Dual P-Channel MOSFET Low RDS(on) trench technology.
	LDP4953T1G	331Kb/5P	Dual P-Channel MOSFET Low RDS(on) trench technology.
	S-LNB8266DT1AG	658Kb/5P	N-Channel 60-V Power MOSFET Low RDS(on) trench technology.
	S-LNP2601T1G	2Mb/8P	20 V Complementary Trench MOSFET; N-Channel:VDS = 20V; P-Channel:VDS = -20V;
	LP4433T1G	567Kb/5P	P-Channel 30-V (D-S) MOSFET Low rDS(on) trench technology
	LN7308DT1WG	373Kb/3P	N-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
	LNB8206DT0AG	559Kb/5P	N-Channel 20-V (D-S) MOSFET Low RDS(on) trench technology.
	LNB8408DT0AG	553Kb/7P	N-Channel 40-V (D-S) MOSFET Low RDS(on) trench technology.
	LP8233DT1AG	701Kb/5P	P-Channel 20-V (D-S) MOSFET Low RDS(on) trench technology
	S-LNB8260DT1AG	434Kb/5P	N-Channel 60-V (D-S) MOSFET Low RDS(on) trench technology.
	S-LPB8615DT0AG	275Kb/5P	P-Channel 60-V (D-S) MOSFET Low RDS(on) trench technology

1 2 3 >

1 2 3 >

What is TRENCH

Trench is one of the electronic component manufacturing technologies, and is used in the process of making semiconductor devices.

Trench technology is a technology developed to improve the electrical performance of semiconductor devices.

Trench technology redesigns the structure of semiconductor devices to improve device heat generation and performance degradation.

With trench technology, a small pit (trench) can be dug inside a semiconductor device to increase the surface area of the device.

This improves electrical performance because the path through which the current flows is shorter.

Trench technology is primarily used in high-performance semiconductor devices such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors).

These semiconductor devices are used in high-speed electronic circuits, power conversion devices, and automotive control devices.

Trench technology plays a very important role in the modern electronic component industry as it improves device performance and efficiency.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

ALLDATASHEET.COM

Does ALLDATASHEET help your business so far? [ DONATE ]

About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List
All Rights Reserved©Alldatasheet.com

Mirror Sites English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz

Family Site : ic2ic.com | icmetro.com