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TRENCH Datasheet, PDF

Searched Keyword : 'TRENCH' - Total: 46 (1/3) Pages
ManufacturerPart #DatasheetDescription
Company Logo Img
Leshan Radio Company
S-LN7610DT1WG Datasheet pdf image
N-Channel Power Trench MOSFET
LN7610DT1WG Datasheet pdf image
N-Channel Power Trench MOSFET
LNB86085DT0AG Datasheet pdf image
N-Channel Power Trench MOSFET
LNB8616DT0AG Datasheet pdf image
N-Channel Power Trench MOSFET
LN76076HDT1WG Datasheet pdf image
N-Channel Power Trench MOSFET
LP4935T1G Datasheet pdf image
P-Channel MOSFET Low RDS(on) trench technology.
LNP3604T1G Datasheet pdf image
30 V Complementary Trench MOSFET P-Channel:VDS = -30V
LNP2601T1G Datasheet pdf image
20 V Complementary Trench MOSFET N-Channel:VDS = 20V
LNP3707T1G Datasheet pdf image
30 V Complementary Trench MOSFET P-Channel:VDS = -30V
LDP4098T1G Datasheet pdf image
Dual P-Channel MOSFET Low RDS(on) trench technology.
LDP4953T1G Datasheet pdf image
Dual P-Channel MOSFET Low RDS(on) trench technology.
S-LNB8266DT1AG Datasheet pdf image
N-Channel 60-V Power MOSFET Low RDS(on) trench technology.
S-LNP2601T1G Datasheet pdf image
20 V Complementary Trench MOSFET; N-Channel:VDS = 20V; P-Channel:VDS = -20V;
LP4433T1G Datasheet pdf image
P-Channel 30-V (D-S) MOSFET Low rDS(on) trench technology
LN7308DT1WG Datasheet pdf image
N-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
LNB8206DT0AG Datasheet pdf image
N-Channel 20-V (D-S) MOSFET Low RDS(on) trench technology.
LNB8408DT0AG Datasheet pdf image
N-Channel 40-V (D-S) MOSFET Low RDS(on) trench technology.
LP8233DT1AG Datasheet pdf image
P-Channel 20-V (D-S) MOSFET Low RDS(on) trench technology
S-LNB8260DT1AG Datasheet pdf image
N-Channel 60-V (D-S) MOSFET Low RDS(on) trench technology.
S-LPB8615DT0AG Datasheet pdf image
P-Channel 60-V (D-S) MOSFET Low RDS(on) trench technology

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What is TRENCH

Trench is one of the electronic component manufacturing technologies, and is used in the process of making semiconductor devices.

Trench technology is a technology developed to improve the electrical performance of semiconductor devices.

Trench technology redesigns the structure of semiconductor devices to improve device heat generation and performance degradation.

With trench technology, a small pit (trench) can be dug inside a semiconductor device to increase the surface area of the device.

This improves electrical performance because the path through which the current flows is shorter.

Trench technology is primarily used in high-performance semiconductor devices such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors).

These semiconductor devices are used in high-speed electronic circuits, power conversion devices, and automotive control devices.

Trench technology plays a very important role in the modern electronic component industry as it improves device performance and efficiency.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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