TRENCH Datasheet(PDF) - VS-GT105LA120UX - Vishay Siliconix

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TRENCH Datasheet, PDF

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Searched Keyword : 'TRENCH' - Total: 1675 (1/84) Pages

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	VS-GT105LA120UX	190Kb/9P	Trench IGBT technology Revision: 17-Oct-16
	V10P20	90Kb/5P	Trench MOS Schottky technology Revision: 17-Feb-17
	V15PL50	756Kb/5P	Trench MOS Schottky technology Revision: 02-Jul-13
	V25PL60-M3	82Kb/5P	Trench MOS Schottky technology Revision: 15-May-14
	VS-GP100TS60SFPBF	220Kb/9P	Trench PT IGBT technology Revision: 11-Jun-15
	V8P6-M3	103Kb/5P	Trench MOS Schottky technology Revision: 07-Mar-17
	V15P6-M3	96Kb/5P	Trench MOS Schottky technology Revision: 09-Jan-17
	V20PL50-M3	82Kb/5P	Trench MOS Schottky technology Revision: 15-May-14
	VSSA3L6S-M3	87Kb/4P	Trench MOS Schottky technology Revision: 05-Nov-13
	VSSAF5N50	124Kb/5P	Trench MOS Schottky technology Revision: 24-Jul-14
	VSSB3L6S-M3	90Kb/4P	Trench MOS Schottky technology Revision: 05-Nov-13
	VSSC8L45-M3	91Kb/4P	Trench MOS Schottky technology Revision: 04-Mar-14
	VFT760	78Kb/4P	Trench MOS Barrier Schottky Rectifier Revision: 18-Nov-10
	VT2080S	142Kb/5P	Trench MOS Barrier Schottky Rectifier Revision: 30-Nov-10
	VT5200	133Kb/5P	Trench MOS Barrier Schottky Rectifier Revision: 09-Dec-09
	VFT1080S	78Kb/4P	Trench MOS Barrier Schottky Rectifier Revision: 18-Nov-10
	VFT3080S	79Kb/4P	Trench MOS Barrier Schottky Rectifier Revision: 18-Nov-10
	VT6045CB	122Kb/5P	Trench MOS Barrier Schottky Rectifier Revision: 29-Oct-13
	VFT3045BP	76Kb/4P	Trench MOS Barrier Schottky Rectifier
	VT1045CBP	127Kb/5P	Trench MOS Barrier Schottky Rectifier Revision: 28-Oct-13

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What is TRENCH

Trench is one of the electronic component manufacturing technologies, and is used in the process of making semiconductor devices.

Trench technology is a technology developed to improve the electrical performance of semiconductor devices.

Trench technology redesigns the structure of semiconductor devices to improve device heat generation and performance degradation.

With trench technology, a small pit (trench) can be dug inside a semiconductor device to increase the surface area of the device.

This improves electrical performance because the path through which the current flows is shorter.

Trench technology is primarily used in high-performance semiconductor devices such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors).

These semiconductor devices are used in high-speed electronic circuits, power conversion devices, and automotive control devices.

Trench technology plays a very important role in the modern electronic component industry as it improves device performance and efficiency.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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