Manufacturer | Part # | Datasheet | Description |
SHIKUES Electronics
|
MSK240AW |
312Kb/2P |
Trench MOS Barrier Schottky |
MSK340A |
320Kb/2P |
Trench MOS Barrier Schottky |
MBR30100C-ST |
482Kb/3P |
Trench MOS schottky technology, Low stored charge Majority Carrier Conduction |
SK10U60AAP |
970Kb/4P |
60V Trench MOS Barrier Schottky Low VF 0.505V@10A, 25 oC |
SK10U100AA |
2Mb/4P |
100V Trench MOS Barrier Schottky Ultra Low VF 0.63V@10A, 25 oC |
SDW3045 |
1,003Kb/5P |
N-Channel enhancement mode power field effect transistors are using trench DMOS technology |
SDW2065 |
963Kb/5P |
These dual N Channel enhancement mode power fieldeffect transistors are using trench DMOS technology. |