Manufacturer | Part # | Datasheet | Description |
Alpha & Omega Semicondu...
|
AON7140 |
322Kb/6P |
Low Gate Charge |
AOE6932_36_PR |
76Kb/2P |
AOE6932 improves gate driving performance |
AGD8252B1 |
516Kb/9P |
High Voltage Half-Bridge Gate Driver IC Rev. 1.1 October 2018 |
AGD8136A |
1Mb/14P |
High Voltage 3-Phase Gate Driver IC Rev.1.3 October 2018 |
AGD8156A |
957Kb/14P |
High Voltage 3-Phase Gate Driver IC Rev. 1.3 October 2018 |
AOK75B60D1 |
819Kb/9P |
Minimal gate spike under high dV/dt |
AP30G120SW |
100Kb/3P |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD |
AOK20B120E2 |
494Kb/8P |
Minimal gate spike due to high input capacitance |
AOK30B135W1 |
512Kb/8P |
Minimal gate spike due to high input capacitance |
AOK20B135E1 |
673Kb/8P |
Minimal gate spike due to high input capacitance |
AOK30B120D2 |
608Kb/8P |
Minimal gate spike due to high input capacitance |
AOTF4126 |
428Kb/7P |
fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge |
AOK065V65X2 |
880Kb/9P |
650V αSiC Silicon Carbide Power MOSFET Rev. 1.0 October 2020 |
AOK150V120X2Q |
833Kb/9P |
1200 V αSiC Silicon Carbide Power MOSFET Rev. 1.1 September 2021 |
AOM065V120X2 |
818Kb/9P |
1200 V αSiC Silicon Carbide Power MOSFET Rev. 1.1 March 2022 |
AOM033V120X2Q |
778Kb/9P |
1200 V αSiC Silicon Carbide Power MOSFET Rev. 1.1 June 2021 |
AOK033V120X2 |
829Kb/9P |
1200 V αSiC Silicon Carbide Power MOSFET Rev. 1.0 June 2021 |
AOK065V120X2 |
874Kb/9P |
1200 V αSiC Silicon Carbide Power MOSFET Rev. 1.3 March 2022 |
AOK150V120X2 |
828Kb/9P |
1200 V αSiC Silicon Carbide Power MOSFET Rev. 1.0 September 2021 |
AOM060V75X2Q |
1Mb/8P |
750 V αSiC Silicon Carbide Power MOSFET Rev. 1.2 October 2022 |