LTE Datasheet(PDF) - BGA7M1N6 - Infineon Technologies AG

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	BGA7M1N6	1Mb/22P	Silicon Germanium Low Noise Amplifier for LTE Revision 3.1, 2014-02-11
	BGA7H1N6	1Mb/19P	Silicon Germanium Low Noise Amplifier for LTE Revision 3.1, 2014-02-11
	BGA7L1N6	1Mb/22P	Silicon Germanium Low Noise Amplifier for LTE Revision 3.1, 2014-02-11
	BGA5H1BN6	330Kb/12P	18dB High Gain Low Noise Amplifier for LTE Highband Revision 2.2 2018-03-15
	BGA5M1BN6	330Kb/12P	18dB High Gain Low Noise Amplifier for LTE Midband Revision 2.2 2018-03-15
	BGA5L1BN6	330Kb/12P	18dB High Gain Low Noise Amplifier for LTE Lowband Revision 2.0 2018-03-15
	BGA8V1BN6	303Kb/11P	Low Noise Amplifier for LTE Band 42 and Band 43 Revision 3.3 2017-09-14
	BGS16MA12	555Kb/16P	MIPI 2.0 SP6T switch for LTE diversity, Tx and LAA applications Revision 1.1 2018-09-10
	BGS14MA11	529Kb/17P	MIPI 2.0 SP4T switch for LTE diversity, Tx and LAA applications Revision 2.1 2018-07-17
	BGS18MA12	556Kb/16P	MIPI 2.0 SP8T switch for LTE diversity, Tx and LAA applications Revision 1.1 2018-09-10
	BGM7LLHM4L12	220Kb/2P	Infineon?셲 New LTE Low Noise Amplifiers Almost Double Smartphone Data Rates 04/2014
	BGS18MA14	612Kb/16P	MIPI 2.0 SP8T switch for LTE Rx and Tx applications up to 3.8GHz Revision 2.4 2018-09-10
	BGM1143N9	913Kb/25P	BGM1143N9 FEM for GNSS wi th LTE Band-13 (777-787 MHz) suppression, 0201 components Revision: Rev.1.0 2013-07-29
	BGA735N16	2Mb/33P	High Linearity Tri-Band LTE/UMTS LNA (2600/2300/2100, 1900/1800, 900/800/700 MHz) Revision 3.8, 2010-12-23

LTE Datasheet, PDF

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