Manufacturer | Part # | Datasheet | Description |
WOLFSPEED, INC.
|
CAB760M12HM3R |
1Mb/11P |
1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module Rev. 1, 2022-02-25 |
CAB760M12HM3 |
1Mb/11P |
1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module Rev. 1, 2022-02-25 |
CAS480M12HM3 |
1Mb/11P |
1200 V, 480 A, Silicon Carbide High-Performance, Switching Optimized, Half-Bridge Module Rev. 2, 2022-02-25 |
PTVA101K02EV |
511Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Rev. 04, 2023-07-07 |
PXAC210552FC |
702Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz Rev. 05, 2023-06-28 |
PTVA127002EV |
691Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz Rev. 05, 2023-07-10 |
PTRA082808NF |
677Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 – 820 MHz Rev. 06.2, 2022-1-27 |
PTFC270101M |
933Kb/22P |
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz Rev. 07, 2023-06-28 |
PTRA087008NB |
731Kb/11P |
Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz Rev. 03.4, 2022-02-13 |
PTRA094808NF |
696Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 480 W, 48 V, 859 – 960 MHz Rev. 05.2, 2022-01-04 |
CAS120M12BM2 |
968Kb/11P |
1200 V, 120 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Rev. 1, 2020-11-11 |
PTRA094858NF |
1Mb/9P |
Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 859 – 960 MHz Rev. 04, 2023-06-28 |
PTVA082407NF |
733Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 746 – 821 MHz Rev. 04.1, 2022-02-13 |
PTVA104501EH |
540Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz Rev. 04, 2023-07-10 |
PXFE181507FC |
695Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 175 W, 28 V, 1805 – 1880 MHz Rev. 04, 2023-06-28 |
PTVA030121EA |
394Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Rev. 06, 2018-06-13 |
PTVA120501EA |
695Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz Rev. 04, 2023-07-10 |
PTAC240502FC_V1 |
1Mb/8P |
Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz Rev. 05, 2023-06-28 |
PXAE183708NB |
667Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 320 W, 48 V, 1805 – 1880 MHz Rev. 04, 2022-12-20 |
PXAE213708NB |
707Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 2110 – 2200 MHz Rev. 04, 2022-12-20 |