| Manufacturer | Part # | Datasheet | Description |
Siemens Semiconductor G...
|
PMB2330 |
175Kb/7P |
2-GHz-Mixer |
| TDA6130-5X4 |
177Kb/8P |
2-GHz MIXER |
| PMB2313T |
218Kb/19P |
Prescaler Circuit 1.1 GHz |
| PMB2314-T |
160Kb/14P |
Prescaler Circuit 2.1 GHz PMB 2314T |
| SDA3202 |
462Kb/10P |
1.3 GHZ PLL WITH I2C BUS |
| CFY30 |
46Kb/6P |
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) |
| BGA310 |
20Kb/4P |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
| MGP3006X |
450Kb/21P |
GHz PLL with I2C Bus and Four Chip Addresses |
| MGP3006X6 |
444Kb/21P |
GHz PLL with I2C Bus and Four Chip Addresses |
| SDA3302 |
864Kb/27P |
GHz PLL with I2C Bus and Four Chip Addresses |
| BFQ60 |
121Kb/5P |
LOW NOISE NPN SILICON MICROVAVE TRANSISTOR UP TO 2 GHz |
| BGA312 |
20Kb/4P |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
| BGA318 |
20Kb/4P |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
| BAT62-07W |
33Kb/4P |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
| BAT62-02W |
26Kb/4P |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
| BAT62 |
79Kb/3P |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies.) |
| BAT62-03W |
39Kb/4P |
Silicon Schottky Diode (Low Barrier diode for detectors up to GHz frequencies) |
| CLY2 |
51Kb/7P |
GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz) |
| BXY43A |
19Kb/2P |
Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter) |
| BFP405 |
49Kb/8P |
NPN Silicon RF Transistor (For low current applications For oscillators up to 12 GHz) |
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