Manufacturer | Part # | Datasheet | Description |
Stanson Technology
|
STC6332 |
421Kb/9P |
The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. |
ST2318SRG |
221Kb/7P |
ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. |
STP4403 |
321Kb/6P |
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. |
STP9235 |
331Kb/6P |
STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. |
ST2319SRG |
229Kb/8P |
ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. |
STP9434 |
314Kb/6P |
STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. |
STP9527 |
927Kb/7P |
STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. |
ST2315SRG |
218Kb/6P |
ST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. |
STP7401 |
461Kb/6P |
STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. |
ST3401SRG |
212Kb/6P |
ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. |
ST3406SRG |
325Kb/6P |
ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. |
STP9437 |
375Kb/6P |
STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. |
ST2304SRG |
630Kb/6P |
ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. |
ST2341A |
582Kb/6P |
ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. |
ST3400SRG |
547Kb/6P |
The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. |
ST7400 |
389Kb/8P |
ST7400 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. |
STN4440 |
637Kb/6P |
STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. |
STN4488L |
644Kb/7P |
STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. |
STN4526 |
616Kb/6P |
STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. |
STP6621 |
452Kb/6P |
STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. |