| Manufacturer | Part # | Datasheet | Description |
Samsung semiconductor
|
KMM53616000CK |
410Kb/20P |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| KMM53616004BK |
415Kb/19P |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| KMM53632000BK |
389Kb/18P |
32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| KMM53616004CK |
453Kb/21P |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| KMM53616000BK |
371Kb/18P |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| KMM53632004BK |
434Kb/19P |
32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V |
| KMM53632004CK |
475Kb/21P |
32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V |
| KMM53632000CK |
428Kb/20P |
32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| K7N803645M |
402Kb/18P |
256K X 36 & 512K X 18 PIPELINED N-T RAM - TM |
| KMM5368003BSW |
365Kb/18P |
8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |
| K4C89363AF |
1Mb/58P |
2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| KMM5364005BSW |
393Kb/19P |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |
| KMM5361203C2W |
280Kb/17P |
1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh |
| KMM5364003BSW |
351Kb/18P |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |
| KMM5364003CSW |
391Kb/20P |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |
| KMM5364005CSW |
415Kb/21P |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |
| KMM5362203C2W |
284Kb/17P |
2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V |
| KMM5361205C2W |
289Kb/17P |
1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh |
| KMM5362205C2W |
296Kb/17P |
2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh |
| KMM5364005CK |
277Kb/15P |
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V |
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