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330V, 180A PDP TRENCH IGBT Datasheet, PDF

PACELEADER INDUSTRIAL(10)Pan Jit International Inc.(1)Panasonic Semiconductor(3)Power Integrations, Inc.(6)Powerex Power Semiconductors(321)Powersem GmbH(49)Recom International Power(1)Rectron Semiconductor(9)Renesas Technology Corp(400)Richtek Technology Corporation(3)Rohm(125)SamHop Microelectronics Corp.(5)Sangdest Microelectronic (Nanjing) Co., Ltd(2)Sanken electric(146)SanRex Corporation(9)Sanyo Semicon Device(21)Schneider Electric(12)Schurter Inc.(2)SeCoS Halbleitertechnologie GmbH(62)SemiHow Co.,Ltd.(60)Semikron International(868)SemiWell Semiconductor(11)SEMPO ELECTRONIC Limited(15)Sensitron(27)Shanghai Leiditech Electronic Technology Co., Ltd(52)Shanghai Shunye Electronics Co.,Ltd.(1)Sharp Corporation(6)SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.(1578)Shenzhen Foster Semiconductor Co., Ltd.(1)SHENZHEN FUMAN ELECTRONICS CO., LTD.(8)Shenzhen Huazhimei Semiconductor Co., Ltd(94)Shenzhen Luguang Electronic Technology Co., Ltd(5)Shenzhen Meipusen Semiconductor Co., Ltd(4)Shenzhen Taychipst Electronic Co., Ltd(6)Shenzhen Winsemi Microelectronics Co., Ltd(4)SHIKUES Electronics(7)Shindengen Electric Mfg.Co.Ltd(9)Siemens Semiconductor Group(74)Silan Microelectronics Joint-stock(1)Silikron Semiconductor Co.,LTD.(78)Sirectifier Semiconductors(52)Solid State Optronic(3)Solid States Devices, Inc(30)Solitron Devices Inc.(1)Stanson Technology(42)STMicroelectronics(444)SYNC POWER Crop.(2)Taiwan Semiconductor Company, Ltd(123)TDK Electronics(2)TECH PUBLIC Electronics co LTD(2)TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS(1)Texas Instruments(28)Texas Instruments(26)Thinki Semiconductor Co., Ltd.(46)Tiger Electronic Co.,Ltd(1)Toppower Electronic Technology Limited(5)Toshiba Semiconductor(249)TRACO Electronic AG(2)
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Searched Keyword : '330V, 180A PDP Trench IGBT ' - Total: 42 (1/3) Pages
ManufacturerPart #DatasheetDescription
Company Logo Img
Stanson Technology
STC6332 Datasheet pdf image
421Kb/9P
The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
ST2318SRG Datasheet pdf image
221Kb/7P
ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
STP4403 Datasheet pdf image
321Kb/6P
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
ST2319SRG Datasheet pdf image
229Kb/8P
ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
STP9434 Datasheet pdf image
314Kb/6P
STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
STP9235 Datasheet pdf image
331Kb/6P
STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
STP9527 Datasheet pdf image
927Kb/7P
STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST2315SRG Datasheet pdf image
218Kb/6P
ST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP7401 Datasheet pdf image
461Kb/6P
STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST3401SRG Datasheet pdf image
212Kb/6P
ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
ST3406SRG Datasheet pdf image
325Kb/6P
ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP9437 Datasheet pdf image
375Kb/6P
STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST3422A Datasheet pdf image
338Kb/6P
The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
STN4346 Datasheet pdf image
352Kb/7P
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4426 Datasheet pdf image
362Kb/6P
STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP6308 Datasheet pdf image
420Kb/6P
STP6308 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4392 Datasheet pdf image
383Kb/7P
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4480 Datasheet pdf image
742Kb/6P
STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4850 Datasheet pdf image
532Kb/6P
STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN1810 Datasheet pdf image
966Kb/7P
STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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