Manufacturer | Part # | Datasheet | Description |
Renesas Technology Corp
|
RJH1CM6DPQ-E0 |
114Kb/10P |
1200V - 20A - IGBT Application: Inverter |
RJH1CM6DPQ-E0 |
59Kb/4P |
1200V - 20A - IGBT Application: Inverter |
RJH1CM6DPQ-E0 |
116Kb/10P |
1200V - 20A - IGBT Application: Inverter |
RJH1CD5DPQ-E0 |
59Kb/4P |
1200V - 20A - IGBT Application: Inverter |
BCR20CM-12LB |
202Kb/8P |
600V - 20A - Triac Medium Power Use |
BCR20FM-12LB |
113Kb/8P |
600V - 20A - Triac Medium Power Use |
BCR20PM-14LJ |
108Kb/8P |
700V - 20A - Triac Medium Power Use |
BCR20CM-16LB |
508Kb/9P |
800V - 20A - Triac Medium Power Use Feb. 1, 2019 |
BCR20FM-12LB |
113Kb/8P |
600V - 20A - Triac Medium Power Use |
BCR20CM-16LB |
141Kb/9P |
800V - 20A - Triac Medium Power Use |
BCR20FM-14RA |
468Kb/7P |
700V - 20A - Triac Medium Power Use Oct. 10, 2019 |
BCR20PM-14LJ |
108Kb/8P |
700V - 20A - Triac Medium Power Use |
BCR20CM-12LB |
478Kb/9P |
600V - 20A - Triac Medium Power Use Sep. 11, 2018 |
BCR20FM-14LJ |
103Kb/8P |
700V - 20A - Triac Medium Power Use |
BCR20FM-14LJ |
103Kb/8P |
700V - 20A - Triac Medium Power Use |
RJS6004WDPK |
65Kb/4P |
600V - 20A - Diode SiC Schottky Barrier Diode |
RJS6004WDPK |
70Kb/4P |
600V - 20A - Diode SiC Schottky Barrier Diode |
ISL8240M |
1Mb/31P |
Dual 20A/Single 40A Step-Down Power Module |
RJK2076DPA |
96Kb/7P |
200V - 20A - MOS FET High Speed Power Switching |
RJK2075DPA |
96Kb/7P |
200V - 20A - MOS FET High Speed Power Switching |