Manufacturer | Part # | Datasheet | Description |
Toshiba Semiconductor
|
TC58FVM7T2AFT65 |
622Kb/69P |
128-MBIT (16M × 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY 2004-09-01 |
TC58FVB160AF |
539Kb/41P |
16-MBIT (2M x 8 BITS / 1M x 16 BITS) CMOS FLASH MEMORY |
TC58FVT641 |
593Kb/53P |
64-MBIT (8M 횞 8 BITS / 4M 횞 16 BITS) CMOS FLASH MEMORY |
TC58FVT160 |
1Mb/29P |
16-MBIT (2M x 8 BITS/1M x 16 BITS) CMOS FLASH MIMORY |
TC58FVT321-70 |
555Kb/48P |
32-MBIT (4M 횞 8 BITS / 2M 횞 16 BITS) CMOS FLASH MEMORY |
TC58FVT800FT-85 |
1Mb/28P |
8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY |
TC58FVM7B2 |
649Kb/68P |
128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY |
TC55257DPI-70V |
676Kb/13P |
STATIC RAM |
TC58NVG0S3AFT05 |
559Kb/33P |
1 GBIT (128M 횞 8 BITS) CMOS NAND EEPROM |
TC58128AFT |
617Kb/33P |
128-MBIT (16M 횞 8 BITS) CMOS NAND E2PROM |
TC58FVT321FT-10 |
560Kb/48P |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY |
TC581282AXB |
507Kb/31P |
128-MBIT (16M X 8 BITS) CMOS NAND E2PROM |
TC58256AFT |
345Kb/33P |
256-MBIT (32M X 8 BITS) CMOS NAND E2PROM |
TC5832FT |
1Mb/38P |
32 MBIT (4M X 8 BITS) CMOS NAND E2PROM |
TC5816BDC |
1Mb/36P |
16 MBIT (2M x 8 BITS) CMOS NAND FLASH E2PROM |
TC58FVT400FT-10 |
1Mb/28P |
4-MBIT (512K * 8 BITS / 256K * 16BITS)CMOS FLASH MEMORY |
TMM2018AP |
338Kb/6P |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TC514100AP |
635Kb/21P |
4,194,304 WORD x BIT DYNAMIC RAM |
TC514101J |
676Kb/23P |
4,194,304 x 1 BIT DYNAMIC RAM |
TC514410AP |
754Kb/21P |
1,048,576 x 4 BIT DYNAMIC RAM |