Electronic Components Datasheet Search |
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USES Datasheet, PDF |
Searched Keyword : 'USES' - Total: 1755 (1/88) Pages |
Manufacturer | Part # | Datasheet | Description |
Shenzhen Foster Semicon... |
FIR140N098PG |
1Mb/7P |
Uses split-gate technology |
Gennum Corporation |
GS2965 |
3Mb/41P |
Uses standard 27MHz crystal |
GS2985 |
3Mb/45P |
Uses standard 27MHz crystal | |
Silicon image |
SII164 |
471Kb/33P |
Transmitter uses PanelLink Digital technology |
IK Semicon Co., Ltd |
IL1937 |
278Kb/6P |
Uses tiny 1mm Tall Inductors |
GOOD-ARK Electronics |
GDSSF230 |
446Kb/6P |
SSF2302 uses advanced trench technology |
Cypress Semiconductor |
W215B |
168Kb/14P |
Uses external 14.318-MHz crystal |
ON Semiconductor |
NTLJF3117P |
295Kb/2P |
Typical Uses for FETKY Devices Rev.0, Jun-2006 |
Silikron Semiconductor ... |
SSF2300 |
348Kb/7P |
The SSF2300 uses advanced trench technology |
Integrated Device Techn... |
TSI721 |
423Kb/68P |
This document uses the following conventions |
SHENZHEN DOINGTER SEMIC... |
HFD5N60S |
1Mb/5P |
N-Channel MOSFET uses advanced trench technology |
JCS50N06FH-O-F-N-B |
1Mb/5P |
N-Channel MOSFET uses advanced trench technology | |
MTB012N04Q8 |
1Mb/5P |
N-Channel MOSFET uses advanced trench technology | |
MTD20N10J3 |
862Kb/4P |
N-Channel MOSFET uses advanced SGT technology | |
MTDP4953Q8 |
1Mb/5P |
P-Channel MOSFET uses advanced trench technology | |
MTE05N10E3 |
1Mb/5P |
N-Channel MOSFET uses advanced trench technology | |
PE6050K |
887Kb/4P |
N-Channel MOSFET uses advanced trench technology | |
QM0004U |
1Mb/4P |
N-Channel MOSFET uses advanced trench technology | |
QM04N65F |
1Mb/5P |
N-Channel MOSFET uses advanced trench technology | |
MTN2N65CJ3 |
1Mb/5P |
N-Channel MOSFET uses advanced trench technology |
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