Manufacturer | Part # | Datasheet | Description |

Samsung semiconductor
|
K6R4004C1D |
223Kb/9P |
1Mx4 Bit High Speed Static RAM(5.0V Operating) |
K6R4008C1D |
245Kb/10P |
512Kx8 Bit High Speed Static RAM(5.0V Operating) |
K6R1016C1C |
190Kb/11P |
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). |
KM641003C |
127Kb/8P |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating) |
K6R1004C1C |
101Kb/9P |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
K6R1004C1D |
188Kb/9P |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |

List of Unclassifed Man...
|
3DS16-325 |
72Kb/3P |
512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating |

Samsung semiconductor
|
KM6161002B |
197Kb/9P |
64Kx16 Bit High Speed Static RAM(5.0V Operating), Revolutionary Pin out. |

Austin Semiconductor
|
AS8S512K32PEC |
197Kb/7P |
16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit |

Golledge Electronics Lt...
|
GVXO515 |
58Kb/1P |
5.0V VCXO |

Samsung semiconductor
|
KM641003B |
130Kb/8P |
256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out |

Kyocera Kinseki Corpota...
|
KCJXO |
192Kb/1P |
CMOS/ 5.0V |

Samsung semiconductor
|
K6R1004C1B |
128Kb/8P |
256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out |

Texas Instruments
|
LM136-5.0QML |
452Kb/17P |
5.0V Reference Diode |

Kyocera Kinseki Corpota...
|
KC7050A-C5 |
125Kb/1P |
CMOS/ 5.0V/ 7.0횞5.0mm |

Connor-Winfield Corpora...
|
OVC5EQ2BB |
92Kb/2P |
5.0V Sinewave OCVCXO |

Golledge Electronics Lt...
|
MCSO1HV |
566Kb/4P |
5.0V supply voltage |

Guangdong Youtai Semico...
|
SMAJ5.0A |
783Kb/4P |
5.0V-188V 400W |

Kyocera Kinseki Corpota...
|
KCEXO3A |
125Kb/1P |
Programmable CMOS/ 5.0V |
KPEXO7 |
133Kb/1P |
Programmable CMOS/ 5.0V |