| Manufacturer | Part # | Datasheet | Description |
Mitsubishi Electric Sem...
|
M5L27128K |
395Kb/9P |
131 072-BIT(16384-WORD BY 8-BIT) ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM |
Texas Instruments
|
TMS27C128 |
139Kb/14P |
131 072-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| TMS27PC128NL |
137Kb/14P |
TMS27C128 131 072-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
List of Unclassifed Man...
|
HN4827128 |
205Kb/4P |
16384-Word x 8-bit UV Erasable and Programmable Read Only Memory |
Mitsubishi Electric Sem...
|
M5L2764K |
328Kb/7P |
65536-BIT (8192-WORD BY 8-BIT) ERASABLE AND ELECTRICALLT REPROGRAMMABLE ROM |
Texas Instruments
|
TMS2716 |
398Kb/5P |
2048-WORD BY 8-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES |
| TMS2708 |
551Kb/7P |
1024-WORD BY 8-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES |
Renesas Technology Corp
|
M6MGB331S8AKT |
127Kb/3P |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGB331S8BKT |
128Kb/3P |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
Texas Instruments
|
TMS27C256-120JL |
196Kb/13P |
TMS27C256 32768 BY 8-BIT UV ERASABLE TMS27PC256 32768 BY 8-BIT |
| TMS27C256-2JL |
196Kb/13P |
TMS27C256 32768 BY 8-BIT UV ERASABLE TMS27PC256 32768 BY 8-BIT |
NEC
|
UPD485506 |
233Kb/24P |
LINE BUFFER 5K-WORD BY 16-BIT/10K-WORD BY 8-BIT |
Texas Instruments
|
TMS27PC512-25NL |
198Kb/13P |
TMS27C512 65 536 BY 8-BIT UV ERASABLE TMS27PC512 65536 BY 8-BIT |
| TMS27C128-25JL |
137Kb/14P |
072-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| TMS27C128-1JL |
137Kb/14P |
072-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
Renesas Technology Corp
|
M5M29KE131BTP |
336Kb/33P |
134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY |
| M5M5W817KT-70HI |
149Kb/11P |
8388608-BIT (524288-WORD BY 16-BIT / 10485776-WORD BY 8-BIT) CMOS STATIC RAM |
Mitsubishi Electric Sem...
|
M6M80041 |
251Kb/10P |
4096-BIT (256-WORD BY-180 -BIT) ELECTRICALLY ERASABLE AND PROGRAMMABLE ROM |
Renesas Technology Corp
|
M6MGB331S4BKT |
171Kb/3P |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B |
Toshiba Semiconductor
|
TC55W1600FT |
202Kb/13P |
1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM |
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