Manufacturer | Part # | Datasheet | Description |
NEC
|
UPD2364 |
449Kb/4P |
READ ONLY MEMORY 8192 WORDS, 8BITS/WORD |
Integrated Device Techn...
|
IDT72251 |
183Kb/17P |
CMOS SyncFIFOO 8192 X 9 |
Sanyo Semicon Device
|
LE25FV051T |
152Kb/11P |
512k (64k word x 8bits) Serial flash EEPROM |
Sharp Corporation
|
LH540205 |
136Kb/17P |
CMOS 8192 x 9 Asynchronous FIFO |
Sony Corporation
|
CXK5863AP |
291Kb/7P |
8192 word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor
|
HM6264LP-70 |
592Kb/8P |
8192-word x 8-bit High Speed CMOS Static RAM |
Mitsubishi Electric Sem...
|
M5M5165P |
394Kb/6P |
65536-BIT (8192-WORD BY 8-BIT) CMOS STATIC RAM |
Hitachi Semiconductor
|
HM6264A |
54Kb/10P |
8192-word x 8-bit High Speed CMOS Static RAM |
HN27C64FP |
227Kb/5P |
8192-WORD X 8BIR ONE TIME ELECTRICALLY PROGRAMMABLE CMOS ROM |
Integrated Device Techn...
|
IDT7203 |
147Kb/14P |
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
Hitachi Semiconductor
|
HN58C65 |
152Kb/16P |
8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM |
National Semiconductor ...
|
MM5298 |
381Kb/6P |
8192-BIT (8192 X 1) DYNAMIC RAM |
Mitsubishi Electric Sem...
|
M5L2764K |
328Kb/7P |
65536-BIT (8192-WORD BY 8-BIT) ERASABLE AND ELECTRICALLT REPROGRAMMABLE ROM |
Sanyo Semicon Device
|
LC3564B |
137Kb/9P |
64K (8192-word 쨈 8-bit) SRAM with OE, CE1, and CE2 Control Pins |
LC3564CM |
71Kb/11P |
64K (8192-word x 8-bit) SRAM with OE, CE1, and CE2 Control Pins |
NEC
|
UPB408C |
251Kb/5P |
8192 BIT BIPOLAR TTL |
UPB427C |
238Kb/6P |
8192 BIT BIPOLAR TTL |
UPB417C |
233Kb/5P |
8192 BIT BIPOLAR TTL |
Toshiba Semiconductor
|
TC55329P |
307Kb/8P |
32,768 WORD x 9 BIT CMOS STATIC RAM |
TC55329AP |
399Kb/7P |
32,768 WORD x 9 BIT CMOS STATIC RAM |