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1. What is the Drain-Source Voltage limit for the Vishay Siliconix Si2337DS MOSFET according to the provided document?
2. What is the typical Thermal Resistance Junction-to-Ambient for the Si2337DS MOSFET when the time is less than or equal to 10 seconds?
3. What is the Continuous Drain Current for the Si2337DS MOSFET at a case temperature of 70°C according to the document?
The Vishay Siliconix Si2337DS is a new P-Channel 80-V (D-S) MOSFET with features such as TrenchFET® Power MOSFET.
The product summary includes ordering information, package details, and absolute maximum ratings.
The document also provides specifications, typical characteristics, and thermal resistance ratings.
It includes information on thermal transient impedance, single pulse avalanche capability, and power derating.
The document ends with a legal disclaimer notice from Vishay, stating that all product specifications and data are subject to change without notice and disclaiming liability for any errors or inaccuracies.
Part No. | SI2337DS_08 |
Manufacturer | VISHAY |
Size | 110 Kbytes |
Pages | 7 pages |
Description | P-Channel 80-V (D-S) MOSFET |
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