# PDV-P9103 CdS Photoconductive Photocells

## Features

- Visible light response
- Sintered construction
- Low cost
- Light sensing range: 400-700 nm
- Spectral peak: 520 nm
- Packaged in a two-leaded plastic-coated ceramic header

## Absolute Maximum Ratings (TA = 23°C)

- Applied Voltage (Vpk): 150 V
- Continuous Power Dissipation (Pd Δpo/Δt): 90 mW/°C
- Operating/Storage Temperature (TO): -30 to +75 °C
- Soldering Temperature (TS): +260 °C (0.200 inch from base for 3 seconds with heat sink)

## Electro-Optical Characteristics (TA = 23°C)

- Dark Resistance (RD): 1 MW (after 10 sec @ 10 Lux @ 2856 °K)
- Illuminated Resistance (RI): 20-45 KW (10 Lux @ 2856 °K)
- Sensitivity (S): 0.8 W/Lux (LOG(R100)-LOG(R10)/LOG(E100)-LOG(E10))
- Rise Time (tr): 60 ms (10 Lux @ 2856 °K)
- Fall Time (Tf): 25 ms (After 10 Lux @ 2856 °K)

## Applications

- Camera exposure
- Shutter controls
- Night light controls

## Package Dimensions

- Ceramic Package:
- Ø: 0.165 inch (4.19 ± 0.010 inch)
- Length: 0.138 inch (3.50 ± 0.010 inch)
- Width: 0.079 inch (2.00 ± 0.010 inch)
- Lead Extension: 1.023 inch (26.0 ± 0.38 inch)
- Epoxy on Leads: Max.
3 mm