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1. What is the Collector-Base Voltage (VCBO) for the MJ21194 NPN silicon power transistor?
2. What is the minimum DC current gain (hFE) for the MJ21193 PNP silicon power transistor at a collector current of 8 Adc?
3. Where can additional information on the Pb-Free strategy and soldering details be found for these silicon power transistors?
The document is a technical specification for the MJ21193 and MJ21194 silicon power transistors, which are PNP and NPN transistors designed for high power audio output, disk head positioners, and linear applications.
The transistors have features such as low harmonic distortion, high DC current gain, excellent gain linearity, and a high safe operating area.
The document includes maximum ratings, thermal characteristics, electrical characteristics, typical characteristics, and package dimensions for the transistors.
It also provides information on ordering, marking, and testing of the transistors.
The document is copyrighted by Semiconductor Components Industries, LLC and is available for order through their website.
Part No. | MJ21194G |
Manufacturer | ONSEMI |
Size | 73 Kbytes |
Pages | 6 pages |
Description | Silicon Power Transistors |
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