The XN1509 is a composite transistor with two elements incorporated into one package, designed for high-frequency amplification.
It features a reduction in mounting area and assembly cost by half.
The absolute maximum ratings for the transistor are provided, including collector to base voltage, collector to emitter voltage, emitter to base voltage, collector current, total power dissipation, junction temperature, and storage temperature.
The electrical characteristics of the transistor are also detailed, including collector to base voltage, collector to emitter voltage, emitter to base voltage, collector cutoff current, forward current transfer ratio, collector to emitter saturation voltage, transition frequency, and collector output capacitance.
The transistor is designed for high-frequency amplification and offers a compact design with reduced mounting area and assembly cost.