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1. What is the typical drain-source on-resistance (RDS(ON)) of the TJ60S04M3L MOSFET when the gate-source voltage is -10V?
2. What is the maximum leakage current (IDSS) of the TJ60S04M3L MOSFET when the drain-source voltage is -40V?
3. What is the threshold voltage (Vth) range for the TJ60S04M3L MOSFET when the drain-source voltage is -10V and the drain current is -1mA?
Part No. | TJ60S04M3L_V01 |
Manufacturer | TOSHIBA |
Size | 263 Kbytes |
Pages | 9 pages |
Description | Silicon P-Channel MOS (U-MOS) |
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