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IRF9 Datasheets

     IRF9024  IRF9
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Start with   No Data  IRF9*(292) IRF91*(19) IRF92*(22) IRF93*(28) IRF94*(2) IRF95*(95) IRF96*(40) IRF99*(15) IRF9Z*(71)
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Included   No Data  *IRF9*(4)
Manufacturer


Search Partnumber : Included a word "IRF9" - Total : 4 ( 1/1 Page)
NOPart noElectronics DescriptionViewElectronic Manufacturer
4 Advanced Planar Technology International Rectifier
International Rectifier
3 Advanced Planar Technology Low On-Resistance
2 Advanced Planar Technology Low On-Resistance
1 AUTOMOTIVE GRADE Advanced Planar Technology

  1

IRF9 Datasheets

Search Partnumber : Start with "IRF9" - Total : 292 ( 1/10 Page)
NOPart noElectronics DescriptionViewElectronic Manufacturer
292 P-CHANNEL POWER MOSFETS Samsung semiconductor
291 P-CHANNEL POWER MOSFET Seme LAB
290 -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET Intersil Corporation
289 TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.30ohm, Id=-11A) International Rectifier
288 P–CHANNEL POWER MOSFET Seme LAB
Seme LAB
287 P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
286 P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
285 P–CHANNEL POWER MOSFET
284 P-CHANNEL POWER MOSFETS Samsung semiconductor
Samsung semiconductor
283 P-CHANNEL POWER MOSFETS
282 P-CHANNEL POWER MOSFETS
281 P-CHANNEL POWER MOSFETS
280 P-CHANNEL POWER MOSFET Seme LAB
279 -19A, -100V, 0.200 Ohm, P-Channel Power MOSFET Intersil Corporation
278 TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.2ohm, Id=-18A) International Rectifier
277 P-CHANNEL POWER MOSFETS Samsung semiconductor
Samsung semiconductor
276 P-CHANNEL POWER MOSFETS
275 P-CHANNEL POWER MOSFETS
274 -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET Intersil Corporation
273 Advanced Process Technology, Ultra Low On-Resistance International Rectifier
272 P-CHANNEL POWER MOSFETS Samsung semiconductor
271 P-CHANNEL POWER MOSFET Seme LAB
270 -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs Intersil Corporation
269 TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) International Rectifier
268 P-CHANNEL POWER MOSFETS Samsung semiconductor
267 -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs Intersil Corporation
266 P-CHANNEL POWER MOSFETS Samsung semiconductor
265 -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs Intersil Corporation
264 P-CHANNEL POWER MOSFETS Samsung semiconductor
263 -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs Intersil Corporation

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