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IRF9 Datasheets

     IRF9024  IRF9
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Start with   No Data  IRF9*(272) IRF91*(19) IRF92*(22) IRF93*(26) IRF94*(2) IRF95*(89) IRF96*(37) IRF99*(15) IRF9Z*(62)
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Included   No Data  *IRF9*(4)
Manufacturer


Search Partnumber : Included a word "IRF9" - Total : 4 ( 1/1 Page)
NOPart noElectronics DescriptionViewElectronic Manufacturer
4 Advanced Planar Technology International Rectifier
International Rectifier
3 Advanced Planar Technology Low On-Resistance
2 Advanced Planar Technology Low On-Resistance
1 AUTOMOTIVE GRADE Advanced Planar Technology

  1

IRF9 Datasheets

Search Partnumber : Start with "IRF9" - Total : 272 ( 1/10 Page)
NOPart noElectronics DescriptionViewElectronic Manufacturer
272 P-CHANNEL POWER MOSFETS Samsung semiconductor
271 P-CHANNEL POWER MOSFET Seme LAB
270 -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET Intersil Corporation
269 TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.30ohm, Id=-11A) International Rectifier
268 P–CHANNEL POWER MOSFET Seme LAB
Seme LAB
267 P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
266 P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
265 P–CHANNEL POWER MOSFET
264 P-CHANNEL POWER MOSFETS Samsung semiconductor
Samsung semiconductor
263 P-CHANNEL POWER MOSFETS
262 P-CHANNEL POWER MOSFETS
261 P-CHANNEL POWER MOSFETS
260 P-CHANNEL POWER MOSFET Seme LAB
259 -19A, -100V, 0.200 Ohm, P-Channel Power MOSFET Intersil Corporation
258 TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.2ohm, Id=-18A) International Rectifier
257 P-CHANNEL POWER MOSFETS Samsung semiconductor
Samsung semiconductor
256 P-CHANNEL POWER MOSFETS
255 P-CHANNEL POWER MOSFETS
254 -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET Intersil Corporation
253 Advanced Process Technology, Ultra Low On-Resistance International Rectifier
252 P-CHANNEL POWER MOSFETS Samsung semiconductor
251 P-CHANNEL POWER MOSFET Seme LAB
250 -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs Intersil Corporation
249 TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) International Rectifier
248 P-CHANNEL POWER MOSFETS Samsung semiconductor
247 -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs Intersil Corporation
246 P-CHANNEL POWER MOSFETS Samsung semiconductor
245 -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs Intersil Corporation
244 P-CHANNEL POWER MOSFETS Samsung semiconductor
243 -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs Intersil Corporation

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