Manufacturer | Part # | Datasheet | Description |
VBsemi Electronics Co.,... |
VB3102M
|
809Kb/9P
|
Dual N-Channel 100 V (D-S) MOSFET
|
Search Partnumber :
Start with "VB31" -
Total : 102 ( 1/6 Page) |
VBsemi Electronics Co.,... |
VB3102M
|
809Kb/9P |
Dual N-Channel 100 V (D-S) MOSFET
|
New Jersey Semi-Conduct... |
VB30
|
102Kb/1P |
These rectifiers offer high voltage ranges in minimum-sized
|
Extech Instruments Corp... |
VB300
|
140Kb/1P |
3-Axis G-Force Datalogger
|
Vishay Siliconix |
VB30100C
|
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
Revision: 19-May-08 |
VB30100C
|
165Kb/6P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 24-Jun-09 |
VB30100C
|
102Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
01-Jan-2022 |
VB30100C-E3
|
152Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Revision: 11-Sep-13 |
VB30100C-E3
|
178Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
Revision: 13-Dec-16 |
VB30100C-E3
|
214Kb/6P |
Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier
01-Jan-2022 |
VB30100C-E3/4W
|
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
Revision: 19-May-08 |
VB30100C-E3/4W
|
163Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 24-Jun-09 |
VB30100C-E3/8W
|
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
Revision: 19-May-08 |
VB30100C-E3/8W
|
163Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 24-Jun-09 |
VB30100C-M3
|
90Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
Revision: 03-Jan-17 |
VB30100C-M3
|
78Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 15-May-13 |
VB30100CHM3
|
90Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
Revision: 03-Jan-17 |
VB30100C
|
102Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
01-Jan-2022 |
VB30100S
|
168Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A
Revision: 31-Jul-08 |
VB30100S
|
149Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 23-Oct-09 |