Manufacturer | Part # | Datasheet | Description |
Unisonic Technologies |
UT4446G-S08-R
|
202Kb/5P
|
N-CHANNEL ENHANCEMENT MODE
|
VBsemi Electronics Co.,... |
UT4446G-S08-R
|
1Mb/9P
|
N-Channel 30-V (D-S) MOSFET
|
SHENZHEN DOINGTER SEMIC... |
UT4446G-S08-R
|
1Mb/4P
|
N-Channel MOSFET uses advanced trench technology
|
Search Partnumber :
Start with "UT4446G-S08-R" -
Total : 8 ( 1/1 Page) |
Unisonic Technologies |
UT4446G-S08-T
|
202Kb/5P |
N-CHANNEL ENHANCEMENT MODE
|
SHENZHEN DOINGTER SEMIC... |
UT4446G-SO8-R
|
920Kb/5P |
N-Channel MOSFET uses advanced trench technology
|
Unisonic Technologies |
UT4446-S08-R
|
202Kb/5P |
N-CHANNEL ENHANCEMENT MODE
|
UT4446-S08-T
|
202Kb/5P |
N-CHANNEL ENHANCEMENT MODE
|
UT4446L-S08-R
|
202Kb/5P |
N-CHANNEL ENHANCEMENT MODE
|
VBsemi Electronics Co.,... |
UT4446L-S08-R
|
1Mb/9P |
N-Channel 30-V (D-S) MOSFET
|
Unisonic Technologies |
UT4446L-S08-T
|
202Kb/5P |
N-CHANNEL ENHANCEMENT MODE
|
UT4446
|
214Kb/4P |
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR
|