Manufacturer | Part # | Datasheet | Description |
Toshiba Semiconductor |
TIM5964-60SL
|
81Kb/4P
|
MICROWAVE POWER GaAs FET
|
TIM5964-60SL-422
|
308Kb/7P
|
MICROWAVE POWER GaAs FET
2019
|
TIM5964-60SL
|
158Kb/4P
|
IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level
|
TIM5964-6UL
|
162Kb/4P
|
MICROWAVE POWER GaAs FET
|
Search Partnumber :
Start with "TIM5964-6" -
Total : 32 ( 1/2 Page) |
Toshiba Semiconductor |
TIM5964-60SL
|
81Kb/4P |
MICROWAVE POWER GaAs FET
|
TIM5964-60SL-422
|
308Kb/7P |
MICROWAVE POWER GaAs FET
2019 |
TIM5964-60SL
|
158Kb/4P |
IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level
|
TIM5964-6UL
|
162Kb/4P |
MICROWAVE POWER GaAs FET
|
TIM5964-12UL
|
48Kb/4P |
MICROWAVE POWER GaAs FET
|
TIM5964-12UL
|
144Kb/4P |
HIGH POWER P1dB=41.5dBm at 5.9GHz to 6.4GHz
|
TIM5964-16SL
|
165Kb/5P |
MICROWAVE POWER GaAs FET
|
TIM5964-16SL-422
|
162Kb/4P |
IM3=-45 dBc at Pout= 31.5dBm G1dB=8.0dB(min) at 5.85GHz to 6.75GHz
|
TIM5964-16UL
|
145Kb/4P |
HIGH POWER P1dB=42.5dBm at 5.9GHz to 6.4GHz
|
TIM5964-16UL
|
142Kb/4P |
MICROWAVE POWER GaAs FET
|
TIM5964-16UL
|
145Kb/4P |
HIGH POWER P1dB=42.5dBm at 5.9GHz to 6.4GHz
|
TIM5964-25UL
|
142Kb/4P |
MICROWAVE POWER GaAs FET
|
TIM5964-25UL
|
145Kb/4P |
HIGH POWER P1dB=44.5dBm at 5.9GHz to 6.4GHz
|
TIM5964-25UL
|
145Kb/4P |
HIGH POWER P1dB=44.5dBm at 5.9GHz to 6.4GHz
|
TIM5964-30SL
|
172Kb/4P |
MICROWAVE POWER GaAs FET
|
TIM5964-30UL
|
334Kb/8P |
MICROWAVE POWER GaAs FET
2020 |