Manufacturer | Part # | Datasheet | Description |
Hamamatsu Corporation |
S11500-1007
|
453Kb/7P
|
Enhanced near infrared sensitivity: QE=40% (貫=1000 nm), back-thinned FFT-CCD
|
S11500-1007
|
513Kb/8P
|
CCD area image sensor
|
S11510
|
465Kb/8P
|
Enhanced near infrared sensitivity: QE=40% (貫=1000 nm)
|
S11510-1006
|
465Kb/8P
|
Enhanced near infrared sensitivity: QE=40% (貫=1000 nm)
|
S11510-1106
|
465Kb/8P
|
Enhanced near infrared sensitivity: QE=40% (貫=1000 nm)
|
S11510
|
465Kb/8P
|
Enhanced near infrared sensitivity: QE=40% (貫=1000 nm)
|
S11510
|
665Kb/7P
|
IR-enhanced CCD image sensors
|
S11519
|
571Kb/4P
|
Enhanced near IR sensitivity, using a MEMS technology
|
Seiko Instruments Inc |
S1155
|
486Kb/28P
|
HIGH RIPPLE-REJECTION LOW DROPOUT
|
Yangzhou yangjie electr... |
S115F
|
105Kb/2P
|
Schottky Rectifier
|