Manufacturer | Part # | Datasheet | Description |
Polyfet RF Devices |
L88016
|
35Kb/2P
|
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
L88016
|
59Kb/2P
|
RF POWER LDMOS TRANSISTOR
|
L8801P
|
40Kb/2P
|
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
L8801PR
|
47Kb/2P
|
SILICON GATE ENHANCEMENT MODE
|
L8801P
|
53Kb/2P
|
RF POWER LDMOS TRANSISTOR
|
L8821P
|
40Kb/2P
|
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
L8821PR
|
57Kb/2P
|
SILICON GATE ENHANCEMENT MODE
|
L8821P
|
54Kb/2P
|
RF POWER LDMOS TRANSISTOR
|
Hamamatsu Corporation |
L8828-04
|
126Kb/4P
|
CW LASER DIODES
|
L8828-06
|
126Kb/4P
|
CW LASER DIODES
|
L8828-07
|
126Kb/4P
|
CW LASER DIODES
|
L8828-41
|
126Kb/4P
|
CW LASER DIODES
|
L8828-42
|
126Kb/4P
|
CW LASER DIODES
|
L8828-61
|
126Kb/4P
|
CW LASER DIODES
|
L8828-62
|
126Kb/4P
|
CW LASER DIODES
|
L8828-71
|
126Kb/4P
|
CW LASER DIODES
|
L8828-72
|
126Kb/4P
|
CW LASER DIODES
|
Unisonic Technologies |
L88312
|
120Kb/4P
|
SHORT CIRCUIT PROTECT BLOCK FOR LNB
|
L88312G-S08-R
|
120Kb/4P
|
SHORT CIRCUIT PROTECT BLOCK FOR LNB
|
L88312L-S08-R
|
120Kb/4P
|
SHORT CIRCUIT PROTECT BLOCK FOR LNB
|