Manufacturer | Part # | Datasheet | Description |
Toshiba Semiconductor |
K2610
|
291Kb/5P
|
N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
|
Shenzhen Winsemi Microe... |
K2611
|
632Kb/7P
|
Silicon N-Channel MOSFET
|
K2611B
|
1,008Kb/7P
|
Silicon N-Channel MOSFET
|
K2611B
|
288Kb/8P
|
Silicon N-Channel MOSFET
|
K2611B
|
288Kb/8P
|
Silicon N-Channel MOSFET
|
K2611S
|
581Kb/7P
|
Silicon N-Channel MOSFET
|
K2611SB
|
703Kb/7P
|
Silicon N-Channel MOSFET
|
Toshiba Semiconductor |
K2613
|
232Kb/6P
|
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSIII)
|
Search Partnumber :
Start with "K261" -
Total : 39 ( 1/2 Page) |
Toshiba Semiconductor |
K2610
|
291Kb/5P |
N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
|
Shenzhen Winsemi Microe... |
K2611
|
632Kb/7P |
Silicon N-Channel MOSFET
|
K2611B
|
288Kb/8P |
Silicon N-Channel MOSFET
|
K2611B
|
1,008Kb/7P |
Silicon N-Channel MOSFET
|
K2611B
|
288Kb/8P |
Silicon N-Channel MOSFET
|
K2611S
|
581Kb/7P |
Silicon N-Channel MOSFET
|
K2611SB
|
703Kb/7P |
Silicon N-Channel MOSFET
|
Toshiba Semiconductor |
K2613
|
232Kb/6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSIII)
|
Pepperl+Fuchs Inc. |
K26-STR-24VDC-2A
|
1Mb/4P |
Power supply
|
Dongguan City Niuhang E... |
K260
|
2Mb/3P |
HIGH VOLTAGE BIDIRECTIONAL TRIGGER DIODE
|
UN Semiconducctor INC |
K2600G
|
3Mb/5P |
Sidac
Revision March 1,2022 |
K2600SA
|
2Mb/5P |
Sidac
Revision March 1,2022 |